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Method for detecting physical parameter of Long-wave Te-Cd-Hg photovoltaic device

A technology of physical parameters and photovoltaic devices, which is used in the monitoring of photovoltaic systems, single semiconductor device testing, semiconductor/solid-state device testing/measurement, etc.

Inactive Publication Date: 2009-06-10
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is not only time-consuming, but also often has multi-minimum problems in mathematics, so the parameter extraction method for simultaneous fitting models has not yet been established

Method used

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  • Method for detecting physical parameter of Long-wave Te-Cd-Hg photovoltaic device
  • Method for detecting physical parameter of Long-wave Te-Cd-Hg photovoltaic device
  • Method for detecting physical parameter of Long-wave Te-Cd-Hg photovoltaic device

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Embodiment Construction

[0042] Based on the above ideas, the present invention will be further described in detail below through the embodiments and accompanying drawings.

[0043] Device I-V characteristics are measured in such figure 2 done on the experimental equipment shown. First, open the air release valve, inflate the vacuum chamber, fix the sample stage with the sample attached on the sample holder, and weld the lead pin to be tested and the measuring wire. Fix the shield, fix the vacuum cover. Then, close the bleed valve, open the thermocouple silicon tube vacuum gauge, plug in the mechanical pump solenoid valve switch, and evacuate the cavity. When the vacuum degree reaches 0.1torr, stop the vacuum pump. Then, turn on the cooling circulating water, turn on the power switch of the compressor, cool the sample stage, turn on the temperature controller (such as Lakeshore331), and monitor the temperature of the sample stage. Finally, when the temperature drops below 10k, the required temper...

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Abstract

The long wavelength mercury-cadmium-tellurium photovoltaic component physical parameter inspection comprises measuring the I-V curve of the component, using the relationship of R=dV / dI to get R-V curve, with the hidden current analog acquired component physical parameter can provide new ways for the analysis for long wavelength component mentioned here.

Description

Technical field: [0001] The invention relates to a method for analyzing the physical parameters of a non-destructive device, specifically, by measuring the current-voltage (I-V) curve or the resistance-voltage (R-V) curve of a photovoltaic device, and then estimating it according to the dark current model of mercury cadmium telluride Combined to obtain the physical parameters of the device. Background technique: [0002] The traditional detection method of carrier concentration and electron mobility is generally the Hall method; there are many detection methods for minority carrier lifetime, and light modulation infrared absorption method is commonly used. These methods are only applicable to materials of a specific doping type, and cannot directly detect devices that have formed a pn junction. For n-on-p-type devices formed by ion implantation, the characteristic parameters of the junction region are not very clear. The current mainstream view is that the material damage c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26G01R31/265G01R31/28G01R31/00H01L21/66H02S50/10
CPCY02E10/50
Inventor 陆卫全知觉李志锋李宁甄红楼陈平平陈效双李天信
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI