Structure body and method of producing the structure body, medium for forming structure body, and optical recording medium and method of reproducing the same
A manufacturing method and structure technology, applied in optical recording/reproduction, optical recording carrier, optical recording carrier manufacturing, etc., can solve problems such as hindering miniaturization, achieve uniform formation, and suppress the effect of thermal expansion
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Embodiment 1
[0273] The medium for structure formation was produced as follows.
[0274] make Figure 1 ~ Figure 3 The media shown were used for construct formation. The film forming method is cathode sputtering method. The material, film thickness and main film-forming conditions of cathode sputtering method of each layer are shown in Table 1.
[0275] [Table 1]
[0276]
Embodiment 2
[0278] Used as a medium for structure formation figure 1 structure shown. The layer structure is glass substrate / Ge / SiON. The film-forming conditions of each layer are shown in Table 1. A structure was formed on this structure forming medium as follows.
[0279] The structure is formed according to the light irradiation process ( Figure 4 )→etching process ( Figure 5 ) in sequence.
[0280] Used in light irradiation process Figure 12 The laser irradiation setup shown. The laser irradiation device 61 includes a semiconductor laser. The wavelength of the laser is 405nm. Objective lens NA is 0.65. from the side of the substrate 103 figure 1 The shown medium for forming a structure is irradiated with laser light. Such as Figure 16 The laser light is pulse modulated by a laser modulator 62 as shown. Energy level P1 is 10mW and P2 is 3mW. The pulse width T is 24nsec. The pulse period S is 143nsec. The media is rotated by the media rotation device 64 . The rotati...
Embodiment 3
[0284] Used as a medium for structure formation figure 2 structure shown. The layer structure is polycarbonate resin substrate / ZnS-SiO 2 / AgInSbTe / ZnS-SiO 2 . The film-forming conditions of each layer are shown in Table 1. Constructs are formed on this medium. ZnS-SiO 2 The light absorption rate for laser wavelength 405nm is 6×10 -4 .
[0285] The structure is formed according to the light irradiation process ( Figure 9 )→etching process ( Figure 10 ) in sequence.
[0286] Used in light irradiation process Figure 12 The laser irradiation setup shown. The laser irradiation device 61 includes a semiconductor laser. The wavelength of the laser is 405nm. Objective lens NA is 0.85. From the uppermost layer of ZnS-SiO 2 sideways figure 2 The shown laser beam is irradiated on the surface of the dielectric film for structure formation. Such as Figure 16 The laser light is pulse modulated by a laser modulator 62 as shown. Energy level P1 is 4mW and P2 is 1mW. ...
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