Fabricating method for semiconductor device

Abstract

The invention provides a method for manufacturing a semiconductor device, comprising: forming a material layer; forming a hard mask layer on the material layer; forming an antireflection layer and a photoresist layer on the hard mask layer; patterning the photoresist layer; sequentially etching the anti-reflection layer and the hard mask layer; heating and baking the substrate; and etching the material layer. The method of the invention can remove the polymer residue generated during etching, thereby reducing etching defects in the next etching step and obtaining better etching patterns.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor device. Background technique [0002] With the rapid development of semiconductor manufacturing technology, in order to achieve faster computing speed, larger data storage capacity and more functions of semiconductor devices, wafers are developing towards higher component density and high integration. The gate of semiconductor devices become thinner and shorter than ever. After the manufacturing process enters the 65nm process node, the minimum feature size of semiconductor devices has reached below 65nm. [0003] In order to form fine patterns on wafers, sacrificial photomask etching techniques are usually used. A layer of hard mask material, such as silicon nitride, is first deposited on the surface of a material layer such as polysilicon; then an anti-reflection layer (BARC) and a photoresist layer are coated. BA...

AI Technical Summary

Problems solved by technology

However, this wet cleaning method may leave some sulfate ions and ammonium ions on the surface of the mask, and the sulfate ions and ammonium ions may react to form new impurity residues over time

Moreover, the process control of the wet cleaning method is poor, which is not conducive to achieving compatibility with other processes

Images