Metal connecting structure, semiconductor device and its manufacturing method

Abstract

The invention discloses a manufacturing method of a metal connecting structure, which comprises that: a first medium layer is deposited on the surface of a semiconductor substrate; a second medium layer is deposited on the surface of the first medium layer; with the dual damascene technique, a copper dual-damascene connecting structure is formed between the first medium layer and the second medium layer. The method of the invention can reduce the resistance of the metal connecting structure.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a metal connection structure of a semiconductor device and a semiconductor device. Background technique [0002] Today's semiconductor manufacturing technology is developing rapidly, semiconductor devices have a deep submicron structure, and integrated circuits already contain a huge number of semiconductor devices. In such a large-scale integrated circuit, the high-reliability and high-density connection between devices must not only be performed in a single layer, but also between multiple layers. Therefore, multi-layer interconnection structures are usually used for semiconductor devices connect. [0003] figure 1 Simplified schematic diagrams for semiconductor devices and interconnect structures. Such as figure 1 As shown, before the interconnection layer is formed in the backend of line (BEOL), it is usually necessary to dep...

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Problems solved by technology

However, as the feature size of the device continues to shrink, the resistance of the tungsten connection hole continues to increase, especially after the manufacturing process enters the 45nm technology node, the resistance of the tungsten connection hole itself has become unacceptably large

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