Display device
A device and source technology, applied in the field of manufacturing monolithic thin film integrated circuits, manufacturing integrated circuits, and monolithic thin film integrated circuits, can solve the difficulty in manufacturing monolithic active matrix circuits and monolithic integrated circuits, It is difficult to improve the width of the high resistance resistance area and other problems
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Embodiment 1
[0029] The process used to manufacture integrated circuits with different types of TFTs can be seen Figures 1A to 1E and 2A to 3C. Figures 2A to 2C The cross-sections indicated by alternating long and short hatching lines correspond to Figure 1A , 1C and 1E. The substrate 101 made of Corning 7059 has a size of 300 x 300 mm or 100 x 100 mm. Using sputtering or plasma CVD (PCVD) method to form a thick 1000 to silicon oxide film 102.
[0030] The amorphous silicon film is deposited by PCVD or low pressure CVD (LPCVD) with a thickness of 300 to Preferably from 500 to The amorphous silicon film is patterned to form island-shaped silicon regions 103 and 104 . By sputtering or PCVD, a silicon oxide film is formed with a thickness of 200 to Preferably from 500 to The silicon oxide film also functions as a gate insulating film. When PCVD is used, the RF discharge is generated using oxygen and raw gas at a temperature of 150 to 400°C, preferably 200 to 250°C. TEOS is de...
Embodiment 2
[0046] This example can be found in Figures 3A to 3F , 4A to 4C. Figures 3A to 3F yes Figures 4A to 4C Sectional view of the part represented by the long and short hatching. Substrate 201 made of Corning 7059 with dimensions of 300 x 400 mm or 100 x 100 mm. Using sputtering in an oxygen atmosphere, deposit a thickness of 1000 to Such as silicon oxide as the base oxide film 202. In order to improve productivity, a film formed by decomposing and depositing TEOS by PCVD may also be used.
[0047] Then, by PCVD or LPCVD, a thick 300 to preferably 500 to amorphous silicon film. The laminated substrate is kept at 550 to 600° C. for 24 hours in a reducing (deoxidizing) atmosphere to crystallize the amorphous silicon film. This treatment can also be performed using laser irradiation. A crystalline silicon film is formed into island-shaped active layer regions 203 and 204 . In addition, formed by sputtering thick 700 to silicon oxide film 205.
[0048] Using electr...
Embodiment 3
[0060] Figures 5A to 5E The monolithic active matrix liquid crystal display of this embodiment is shown. The driver consists of complementary TFTs. Active matrix circuits include TFTs for controlling pixels. Using sputtering or PCVD, deposit a thick The silicon oxide film serves as the base oxide film 302 . The substrate is made of Corning 7059 and measures 300 x 400 mm.
[0061] Then, by PCVD or LPCVD, a thick 300 to Preferably from 500 to amorphous silicon film. The laminated substrate was maintained at 550 to 600°C for 24 hours in a reducing atmosphere to crystallize the amorphous silicon film. The island-like regions 303 and 304 are formed of a crystalline silicon film. In addition, formed by sputtering thick 700 to silicon oxide film 305.
[0062] Al film was formed by sputtering with a thickness of to 3µm, such as The aluminum film contains 0.1 to 0.3% by weight scandium (SC). In the same manner as in Example 2, a photoresist film was formed on the al...
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Abstract
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