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High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer

A technology of micro-grooves and dielectric layers, applied in the direction of holding devices, circuits, and electrical components that apply electrostatic attraction, and can solve problems such as gas leakage

Inactive Publication Date: 2009-08-05
AXCELIS TECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another application with high ESC requirements is high current series injectors which also require greater than or approximately 200mW / Kcm 2 HTC (uniformity requirements are slightly looser), but at the same time require a response time of less than or about 1 second and a gas leakage of less than or about 0.5 sccm

Method used

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  • High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
  • High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer
  • High-performance electrostatic clamp comprising a resistive layer, micro-grooves, and dielectric layer

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Embodiment Construction

[0017] see first figure 1 , which demonstrates an electrostatic chuck 1 for holding a semiconductor wafer during processing according to an exemplary embodiment of the present invention. The chuck 1 includes a base member 2 , a resistive layer 4 , a dielectric layer 6 and a pair of high voltage electrodes 5 . The high voltage electrode 5 is located between the resistive layer 4 and the dielectric layer 6 . The base element 2, which may comprise aluminum oxide material, is located next to the resistive layer 4 and may be bonded with a layer 3 of adhesive epoxy material. Resistive layer 4 may comprise a non-conductive material (ie glass) and may be fabricated using standard thick film screen printing techniques, which are well known in the art of semiconductor processing equipment design. The dielectric layer 6 typically comprises a sapphire material, but may also comprise other aluminum oxide materials, such as aluminum oxide or a combination of sapphire and aluminum oxide, a...

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Abstract

An electrostatic chuck that holds semiconductor wafers during processing. An electrostatic chuck includes a base element, a resistive layer, a dielectric layer (which includes a network of gas pressure distribution microgrooves), a gas gap (which is located between the backside of the semiconductor wafer and the dielectric layer), and a pair of high voltage electrodes (which are located between the resistive layer and the dielectric layer). between electrical layers). The electrostatic chuck may further include at least one ground electrode positioned between the resistive layer and the dielectric layer to provide a shield for the air pressure distribution microgroove network. Electrostatic chucks are characterized by greater than or about 200mW / Kcm 2 A heat transfer coefficient of less than or about 1 second and a gas leakage of less than or about 0.5 sccm. It is emphasized that this abstract is provided to comply with regulatory requirements that will allow searchers or other readers to quickly ascertain the subject matter of the technical disclosure. This abstract is presented with the understanding that it will not be used to interpret or limit the scope or significance of the claimed patent.

Description

technical field [0001] The present invention relates generally to equipment used in the manufacture of semiconductor wafers, and more particularly to high performance electrostatic chucks including resistive layers, microgrooves and dielectric layers. Background technique [0002] Several applications in the semiconductor manufacturing industry require electrostatic chucks (ESCs) with significantly higher performance characteristics than existing electrostatic chucks. The application with the most challenging requirements is the SIMOX ion shower, which requires greater than or approximately 200mW / Kcm 2 Excellent thermal conductivity (HTC), and less than or about 1% HTC uniformity (up to 3mm within the edge of the semiconductor wafer). Another application with high ESC requirements is high current series injectors which also require greater than or approximately 200mW / Kcm 2 HTC (homogeneity requirements are slightly looser), but at the same time require a response time of l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H01L21/67H02N13/00
CPCH01L21/6833H02N13/00H01L21/687
Inventor P·克雷曼V·班威尼斯特M·法瑞德D·史东
Owner AXCELIS TECHNOLOGIES