Inverted misarrangement type ballast structural panel display device and its production technique
A flat-panel display and manufacturing process technology, applied in the manufacture of discharge tubes/lamps, image/graphic display tubes, control electrodes, etc., can solve the problems of inability to ensure the cathode emission capability of carbon nanotubes and different field emission capabilities
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Publication Date
- 2009-08-12
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
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Abstract
Description
technical field
[0001] The present invention belongs to the fields of plane display technology, electronic science and technology, vacuum science and technology, integrated circuit science and technology, and nano science and technology, and relates to device fabrication of flat panel field emission displays, in particular to It relates to the device manufacture of flat panel field emission display with carbon nanotube cathode, especially relates to a flat panel display with inverted staggered ballast structure and its manufacturing process. Background technique
[0002] Carbon nanotubes have a small tip curvature radius, high aspect ratio and good electrical conductivity. When an appropriate voltage is applied, a large number of electrons will be emitted, forming a unique cold field emission phenomenon, which has already attracted many researchers. of great importance. The field emission flat panel display made of carbon nanotubes as the cathode material is a new type of h...
Examples
Embodiment Construction
[0041] The present invention will be further described below in conjunction with the accompanying drawings and embodiments, but the present invention is not limited to these embodiments.
[0042] The flat panel display with an inverted staggered ballast structure includes a sealed vacuum chamber formed by a cathode glass panel 1, an anode glass panel 14 and surrounding glass frames 20; layer 15 and phosphor layer 17 prepared on the anode conductive layer; support wall structure 19 between the anode glass panel and the cathode glass panel and getter attachment 18. There are control grid 11, carbon nanotube cathode 13 and inverted staggered ballast structure on the cathode glass panel;
[0043] The inverted staggered ballast structure includes a cathode glass panel 1, a gate lead layer 2, a gate 3, a silicon dioxide insulating layer 4, an n-type doped silicon layer 5, a source 6, a drain 7, Source lead layer 8 , drain lead layer 9 , silicon dioxide isolation layer 10 , gate 11 ...