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Photoresist compositions

A photoresist and composition technology, applied in microlithography exposure equipment, optics, optomechanical equipment, etc., can solve problems such as difficulty in printing isolated and nested structures

Active Publication Date: 2009-08-26
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

See for example U.S. Patent No. 6667136, according to the discussion of the invention, it is difficult to ideally print isolated and nested structures equally, creating an undesirable situation known as line width variation across chips

Method used

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  • Photoresist compositions
  • Photoresist compositions
  • Photoresist compositions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] Example 1: Preparation of acid reactive components

[0066] Approximately 75 grams of IRN77 ion exchange resin was added to 1000 grams of ethyl lactate. The mixture was kept at room temperature for 5 days. The presence of ethyl dilactate (ie, "ELL") was confirmed by analysis, and the ion exchange resin was removed from the ethyl lactate by filtration. This solution is referred to as additive solution 1.

Embodiment 2

[0067] Example 2: Preparation of Photoresist Samples Containing Additive Solution 1

[0068] Samples of two photoresists, Resists 1 and 2, were prepared by mixing the following components to 14.4% solids in ethyl lactate solvent (all components except solvent): Resin composed of terpolymer of ethylene and tert-butyl methacrylate, bis(4-tert-butylphenyl)iodonium-2-trifluoromethylbenzenesulfonate photoacid former, tetramethyllactic acid Ammonium alkaline component, ammonium perfluoroalkylsulfonate surfactant, and fluorinated acrylic copolymer surfactant. A solution of the acid reaction product (Additive Solution 1 as described in Example 1 above), referred to as Resist 2, was added to one of the samples.

[0069] These resist samples were used to image 150 nm isolated lines and 150 nm dense lines. The increase in ELL (ie, ethyl dilactate) content significantly changed the isodensity bias of Resist 2 compared to Resist 1 .

[0070] sample ELL content The width of t...

Embodiment 3

[0071] Example 3: Preparation of Acid Reactive Components

[0072] 1944 grams of ethyl lactate was added to the reaction vessel and cooled to 5°C. Stirring was started in the vessel and 28 grams of a 25% by weight solution of tetramethylammonium hydroxide were added to the reaction vessel over one hour. 28.025 grams of 90% by weight lactic acid solution were added to the reaction vessel. After five hours, the solution was removed from the container and stored at -10°C until used as a photoresist additive. Analysis showed that it contained 6.7% by weight ELL. This solution is referred to as additive solution 2.

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Abstract

The photoresists of the present invention comprise an added acid reactive component, as well as one or more resins and photoactive components. Preferred photoresists of the invention provide the desired isodensity bias on substrates such as microelectronic wafers. Particularly preferred photoresists of the present invention are chemically amplified positive-acting resists which, in addition to acid reactive components, contain ester-based solvents such as ethyl lactate or propylene glycol methyl ether acetate.

Description

technical field [0001] The present invention relates to photoresist compositions that may have enhanced properties including optimized iso-dense bias of imaged lines. In particular, preferred resists of the invention contain added acid reactive components which have been found to be able to adjust the desired isopycnic bias of the imaged lines. Preferred resists of the invention contain, in addition to the acid reactive component, an ester based solvent such as ethyl lactate or propylene glycol methyl ether acetate. Background technique [0002] Photoresists are light-sensitive films used to transfer images to substrates. They form negative or positive images. After the photoresist is coated on the substrate, a latent image is formed on the photoresist coating by exposing the coating to an activating energy source, such as ultraviolet light, through a patterned mask. The mask has areas that are opaque to the activating radiation and areas that are transparent to form the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/20
CPCG03F7/0382G03F7/0048G03F7/0392G03F7/0045
Inventor J·M·明茨M·J·考夫曼N·S·杰西曼
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC