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Solid state energy converter

An energy converter, solid-state technology, applied in circuits, electrical components, thermoelectric devices, etc.

Inactive Publication Date: 2009-09-09
マイクロパワーグローバルリミテッド
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these conventional devices still suffer from disadvantages such as those associated with their limited maximum current density and temperature profile

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Example 1 - Design of Transmitter and Converter

[0047] In the development of the present invention, indium antimonide (InSb) was used as a typical semiconductor material due to its industrial applicability. InSb has the highest known electronic mobility and the largest scattering length (0.8 microns at room temperature). On the other hand, the thermal conductivity of InSb is relatively high, and a figure of merit below the average thermoelectricity can be obtained (ZT=0.2 for optimal conditions). It should be understood that most of the results experimentally achieved for InSb can be applied to various other semiconductors, with modifications based on their properties. However, in both extreme cases, when the bandgap is too small (below k B T, where k B is the Boltzmann constant, and T is the absolute temperature), or this method may not work if it is too large, so that it is difficult to achieve a reasonable barrier height such as below 10k B The thermal flow ind...

Embodiment 2

[0061] Example 2 - Design of Current Collectors

[0062] The same injection method was used to study the effect of barrier height on the collector side of the converter. The experimental results are shown in Figure 6 , in the form of normalized thermoelectric performance as a function of collector barrier height. Current collector temperature (T c ) is close to room temperature. Two distinct effects can be observed. At low barrier heights, a peak is around local compensation, where the concentration of p-type impurities is equal to the concentration of n-type impurities. For this case, the ionization energy for the donor and acceptor is the same. At higher barrier heights, corresponding to temperature, assuming an injected current from the bandgap to the collector contact, the second peak position is the same as Figure 4 exactly the same. Furthermore, this peak corresponds to the electronic shift compensation layer. The emitter and collector are separated by a semico...

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PUM

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Abstract

The present invention discloses a solid state energy converter having a semiconductor or semiconductor-metal implementation for converting thermal energy to electrical energy, or electrical energy to refrigeration. In an n-type thermo-electric embodiment, a highly doped n * The emitter region injects carriers into the n-type bandgap region. The p-type layer is located between the emitter region and the bandgap region, allowing the corresponding Fermi levels to be interrupted and forming a barrier to sort electrons by energy. An additional p-type layer can optionally be formed on the collector side of the converter. With a higher carrier concentration (p * ) one form of these layers acts as a barrier on the cold side of the converter, while the other layer with a carrier concentration close to the bandgap (p ** ) to reduce the thermoelectric backflow component. Ohmic contacts on both sides of the device close a circuit through an external load to convert heat to electricity. In the case of a refrigerator, the external load is replaced by an external power supply.

Description

technical field [0001] This invention relates to the conversion of thermal energy to electrical energy and electrical energy to refrigeration, and more particularly to solid state thermoelectric converters utilizing semiconductor diode implementations. Background technique [0002] Thermionic energy conversion is a method of directly converting thermal energy into electrical energy through thermionic emission. In this process, electrons are thermionic emitted from the metal surface by heating the metal and imparting sufficient energy to a portion of the electrons to overcome the hindrance to escape the metal surface. Unlike most other conventional methods of generating electrical energy, thermionic conversion requires neither an intermediate form of energy nor a working fluid other than an electrical charge in order to convert heat to electricity. [0003] In its most basic form, a conventional thermionic energy converter consists of one electrode connected to a power sourc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/00H10N10/00H10N10/851H01LH10N10/01
CPCH01L35/00H10N10/00H01L31/00
Inventor 扬·R·库切罗夫彼得·L·哈格尔施泰因
Owner マイクロパワーグローバルリミテッド