LED structure

A technology of light-emitting diodes and covering layers, applied in the direction of electrical components, electrical solid devices, circuits, etc., to achieve the effects of high brightness, simple manufacturing process, and high yield

Inactive Publication Date: 2009-09-23
HELIO OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main purpose of the present invention is to overcome the defects of the existing light-emitting diode structure and provide a new light-emitting diode structure. Complex light-emitting diode structure monomers that can be operated in high-voltage environments can be manufactured more easily, making them more suitable for practical use

Method used

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Examples

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no. 1 example

[0075] see Figure 1A , Figure 1B , Figure 1C as shown, Figure 1A It is a schematic diagram of an embodiment in which the first substrate 21 and the light-emitting diode structure 10 of the prior process have not been combined in the prior art, Figure 1B It is a schematic diagram of an embodiment after the first substrate 21 is combined with the light-emitting diode structure 10 of the previous process, Figure 1C will be Figure 1B The perspective view of the embodiment after the temporary substrate 11 and the etching stop layer 12 are removed.

[0076] Generally, the manufacture of the LED structure is to form the LED structure 10 of the pre-process that has not been divided into units and has not yet completed other insulating layers and conductive plates on a wafer in a semiconductor manufacturing process. However, when the actual light-emitting diode structure is applied, because the wafer is too thick and opaque, it cannot be applied and must be removed. Therefor...

no. 2 example

[0097] see Figure 7 to Figure 9 As shown in B, this embodiment is a light emitting diode structure 30, which includes: a first substrate 21, an adhesive layer 22, at least two first ohmic connection layers 23', at least two polycrystalline layers 24, a second The insulating layer 31 , at least two fifth conductive plates 32 and at least two sixth conductive plates 33 .

[0098] The light-emitting diode structure 30 of this example can be used similar to the first embodiment Figure 1A to Figure 1C process, the first substrate 21 coated with the adhesive layer 22 is combined with the pre-process LEDs 28 formed on the wafer. Then, the temporary substrate 11 and the etch stop layer 12 are removed by etching to obtain the light emitting diode structure 30 that has not been divided into units.

[0099] The above-mentioned first substrate 21 has a first surface 211 and a second surface 212 , and the first substrate 21 is mainly used to support the entire LED structure 30 . The f...

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Abstract

The invention relates to a light-emitting diode structure which comprises a first substrate, an adhesive layer formed on the first substrate, a first ohmic connection layer formed on the adhesive layer, an epitaxial layer formed on the first ohmic connection layer, a first insulating layer covered on the exposed surfaces of the first ohmic connection layer and the epitaxial layer, a first current-conducting plate and a second current-conducting plate both formed inside the first insulating layer and electrically connected with the one end of the first ohmic connection layer and the epitaxial layer. With the arrangement of a first groove and a second groove, the complicated series / parallel circuit connection of the light-emitting diode structure can be performed conveniently, and thus the light-emitting diode structure, in a monomer form, is adapted to various operations in high pressure environment.

Description

technical field [0001] The invention relates to a light emitting diode structure, in particular to a high power light emitting diode structure applied in a high voltage environment. Background technique [0002] US Patent Publication No. 6,853,011 discloses a light-emitting polycrystalline layer structure, one end of which includes a light-absorbing temporary substrate, and the other end is adhered to a light-transmitting transparent substrate by phencyclobutene. Then the portion of the light-absorbing temporary substrate is removed. Then, a connection channel is formed in the LED structure to connect the first ohmic contact electrode, and an insulating trench is formed to separate the active layer of the LED structure into two parts. Then, a second ohmic contact electrode is formed on the capping layer, a bonding metal layer is filled in the first channel and successfully formed on the second ohmic contact electrode. Since the two bonding metal layers have the same height...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/15H01L33/00H01L33/20
Inventor 许世昌陈明鸿温士逸李俊哲
Owner HELIO OPTOELECTRONICS
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