Thin-film transistor and production method therefor
A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of carrier capture and scattering, difficulty in obtaining silicon TFT characteristics, and large sub-threshold swing, etc., to achieve Effects of reduced defect density, good productivity, and reduced threshold voltage
Active Publication Date: 2009-10-14
ULVAC INC
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Problems solved by technology
Therefore, it is difficult to obtain good characteristics at the interface between the active layer 101 and the gate insulating layer 105 as in the above-mentioned manufacturing process of the silicon TFT.
[0011] As a result, carrier trapping and scattering occur, and there are problems such as increased threshold voltage shift (shift) or increased subthreshold swing (S value), which is one of the characteristics of low-temperature polysilicon TFTs.
Method used
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Embodiment Construction
[0051] Hereinafter, the present invention will be described based on the illustrated embodiments.
[0052] figure 1 It is a schematic cross-sectional view showing a low-temperature polysilicon TFT (hereinafter referred to as a polysilicon TFT) as a thin film transistor formed by the manufacturing method of the present invention, wherein (a) indicates that the gate insulating layer is a first silicon oxide film, a silicon nitride film and a three-layer laminated structure of a second silicon oxide film; (b) shows a two-layer laminated structure of a first silicon oxide film and a silicon nitride film.
[0053] refer to figure 1 (a), the thin film transistor of the present embodiment includes an active layer 11 including a source region 17, a drain region 19, and a channel region 18 on a substrate 9, and a gate electrode layer 16, and the active layer 11 and the gate electrode layer 16 The gate insulating layer 15 formed between them; the gate insulating layer 15 includes a ...
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The present invention provides a thin film transistor having a gate insulating layer with excellent characteristics and high reliability while ensuring good productivity, and a method for manufacturing the same. The thin film transistor provided by the present invention includes: an active layer 11 including an active region 17 , a channel region 18 and a drain region 19 on a substrate 9 , a gate electrode layer 16 , and a space between the active layer 11 and the gate electrode layer 16 . The thin film transistor with the gate insulating layer 15 formed is composed of the first silicon oxide film 12 formed on the active layer 11 side, the second silicon oxide film 14 formed on the gate electrode layer 16 side, and the gate insulating layer 15 formed on the side of the active layer 11. The silicon nitride film 13 formed between the first silicon oxide film 12 and the second silicon oxide film 14 is formed.
Description
technical field [0001] The present invention relates to a thin film transistor using a silicon oxide film as a gate insulating layer and a manufacturing method thereof. Background technique [0002] Conventional devices such as liquid crystal displays (LCDs) and organic electroluminescence (OLEDs) use amorphous silicon (a-Si), silicon nitride films (SiNx), or silicon oxide films (SiOx), etc. Amorphous silicon TFT (a-SiTFT) and low temperature polysilicon TFT (LTPS-TFT) as thin film transistors formed of thin films. In particular, compared to amorphous silicon TFTs, low temperature polysilicon TFTs can have higher mobility and can be fabricated on transparent and insulating substrates such as glass substrates. [0003] Typical structures of low-temperature polysilicon TFTs include, for example, Figure 18 Coplanar transistors as shown. [0004] The structure of the coplanar transistor is as Figure 18 As shown in the figure, a polysilicon thin film to be an active layer 101...
Claims
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IPC IPC(8): H01L29/786H01L21/318H01L21/336H01L29/49
CPCH01L29/66757H01L29/4908
Inventor 若松贞次菊池亨桥本征典仓田敬臣浅利伸斋藤一也
Owner ULVAC INC