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Wafer surface planarization method

A surface planarization and wafer technology, applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve the problem that the wafer edge cannot meet the planarization requirements, and achieve the effect of improving the degree of planarization

Inactive Publication Date: 2009-11-18
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention is to solve the problem that the edge of the wafer in the prior art cannot meet the planarization requirement

Method used

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Embodiment Construction

[0018] The essence of the method for planarizing the wafer surface of the present invention is to etch the dielectric layer in the edge region of the wafer to remove a part of the thickness of the dielectric layer before chemically mechanically grinding the dielectric layer on the wafer surface, so as to achieve the desired effect on the wafer after grinding. The purpose of correcting the thickness difference between the dielectric layer in the edge area and the dielectric layer in the center area of ​​the wafer, wherein the edge area is the dielectric layer area where the thickness of the dielectric layer is greater than the depth of the etched through hole after the test piece is ground, and the removal thickness of the dielectric layer is greater than or It is equal to the average thickness difference between the dielectric layer in the central area of ​​the wafer and the dielectric layer in the edge area of ​​the wafer measured by the test piece.

[0019] The method for fla...

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Abstract

The invention discloses a method for flattening the surface of a wafer, comprising: providing a wafer with a dielectric layer on the surface, including a central region and an edge region surrounding the central region; removing a partial thickness of the dielectric layer in the edge region; for the entire wafer surface The medium layer is chemically mechanically polished, wherein the edge area is the area of ​​the medium layer where the thickness of the medium layer is greater than the depth of the etched through hole after the test piece is ground, and the thickness of the medium layer in the edge area is greater than or equal to that measured by the test piece after chemical mechanical grinding. The average thickness difference between the dielectric layer in the center area of ​​the wafer and the dielectric layer in the edge area of ​​the wafer. The method for flattening the wafer surface of the present invention makes the dielectric layer on the wafer surface undergo chemical mechanical grinding, and the gap between the thickness of the dielectric layer in the edge region of the wafer and the thickness of the dielectric layer in the central region of the wafer is reduced, thereby improving the flatness of the wafer surface. degree of transformation.

Description

technical field [0001] The invention relates to a method for flattening the surface of a wafer. Background technique [0002] In the manufacturing process of large-scale integrated circuits and ultra-large-scale integrated circuits, in order to increase the density of components and their operating speed, the components of semiconductor wafers, metal wiring, and even the structure used to isolate the distribution of component trenches need to pass through designed to meet the requirements of various components. However, these elements and structures are often not evenly distributed on the surface of the semiconductor wafer, so there are some dense element areas where elements and structures are denser and loose element areas where elements and structures are sparsely distributed. On the other hand, these elements and structures all have a certain thickness, so the surface of the semiconductor wafer has some ups and downs. Therefore, a planarization step is required. [00...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/302C30B33/00
Inventor 仇圣棻孙鹏施平高金凤
Owner SEMICON MFG INT (SHANGHAI) CORP
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