Semiconductor device with an image sensor and method for the manufacture of such a device
An image sensor, semiconductor technology, applied in the direction of semiconductor devices, electric solid devices, electrical components, etc., can solve problems such as leakage current and high radiation sensitivity, and achieve the effect of simple manufacturing
Inactive Publication Date: 2009-12-02
KONINKLIJKE PHILIPS ELECTRONICS NV
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Problems solved by technology
[0003] The disadvantage of known devices is that the leakage current of the device is still relatively high and the radiation sensitivity needs to be further improved
Method used
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[0020] figure 1 A plan view of a known semiconductor device with an image sensor is schematically shown. figure 2 and 3 are schematically shown along lines II-II and III-III respectively perpendicular to figure 1 A cross-section through the thickness of the device. Device 10 includes, for example (see figure 2 ) a substrate 11 and a semiconductor body 12 in which an image sensor is formed with a pixel matrix 1 . The substrate and the semiconductor body comprise a radiation-sensitive element 2 in which charge carriers generated by incident radiation are stored and transferred to a floating diffusion region 20 by means of a transfer electrode 9 . Floating diffusion region 20 is coupled to gate electrode 30 of source follower transistor 3B. Source follower transistor 3B provides the output signal to row select pass transistor 3C having a gate electrode 40 for selectively gating the output signal to connection line 50 . A reset transistor 3A with a gate electrode 60 is use...
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The invention relates to a semiconductor device having a semiconductor body (12) with an image sensor comprising a two-dimensional matrix of pixels (1) each comprising a charge accumulating semiconductor region (2A) coupled to Radiation-sensitive elements (2) to many MOS field-effect crystals (3), in which isolation regions (4) are sunk in the semiconductor body (12) in order to separate adjacent pixels (1), under which are formed with increased doping Another semiconductor region (5) with impurity concentration. According to the present description, a further semiconductor region (5) is sunk into the surface of the semiconductor body (12) and is wider than the isolation region (4). Preferably, the isolation region (4) is only arranged at the position where the radiation sensitive element (2) is adjacent to the MOS transistor (3) of the adjacent pixel (1), and the radiation sensitive elements (2) of two adjacent pixels (1) are mutually A further recessed semiconductor region (6) with increased doping concentration is provided at the location of the junction. Such a device (10) has low leakage current and has high radiation sensitivity and charge storage capacity.
Description
technical field [0001] The invention relates to a semiconductor device having a substrate and a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of pixels each each comprising a radiation sensitive element coupled to a number of MOS field effect transistors, wherein each radiation sensitive element comprises a semiconductor region of a first conductivity type in which charge carriers generated by incident radiation are accumulated and wherein laterally adjoining the semiconductor region In the part of the surface of the semiconductor body, the part of the semiconductor body is of the second conductivity type opposite to the first conductivity type, in order to isolate adjacent pixels, the isolation region is sunk and wherein the semiconductor body of the second conductivity type below the isolation region Another semiconductor region of the second conductivity type having an increased doping concentration is formed in part. Such devices...
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IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/1463H01L27/14609H01L27/14643H01L27/146
Inventor J·P·V·马斯W·-J·托伦H·O·福尔克茨W·H·梅斯W·霍克斯特拉D·W·E·弗布格特D·H·J·M·赫梅斯
Owner KONINKLIJKE PHILIPS ELECTRONICS NV