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Checking method and element manufacture method

An inspection method and a technology for testing patterns, which are applied in semiconductor/solid-state device manufacturing, instruments, electrical components, etc., can solve the problems that the resist cannot be directly measured, and cannot be guaranteed

Inactive Publication Date: 2009-12-09
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing techniques for measuring pattern asymmetry are difficult, require off-line and cannot directly measure the effect in resist, so this method does not guarantee that the measurements that minimize the problem will have the desired effect in the finished product

Method used

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  • Checking method and element manufacture method
  • Checking method and element manufacture method
  • Checking method and element manufacture method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] According to the first method of the present invention, the test structure printed on the substrate W includes the attached Figure 4The repeated double bar grating shown in . Grating 20 includes a pair of double bars 21 and 22 repeated many times. The grating is printed such that the developed lines are formed from solid resist lines. This pattern is sensitive to coma aberrations in the lithographic projection setup and especially in the projection system PL, the brightness asymmetry and the presence of these aberrations will play a role in the internal and external duty cycle P of the printed grating i ,P o appear in the difference from their predetermined values. The scatterometry data of the printed grating 20 are used for reconstruction, using the duty cycle P i and P o as an argument to the refactoring step. Other parameters of the grating, such as line width and shape, can be input to the reconstruction step from information from the printing step and / or ot...

Embodiment 2

[0068] attached Figure 5 The grating structure used in the second method of the present invention is shown. This grating structure is a two-dimensional grating having a hexagonal unit cell with a point at each corner of the unit cell. This pattern is sensitive to 3-wave aberration, which causes the diameter of the black dot 31 to vary relative to the white dot 32 . The ratio of the diameter of the black dot to the white dot can be retrieved from scatterometry data.

Embodiment 3

[0070] In the third method of the present invention, three test grating structures are used to measure coma aberration without reconstructing the grating structure, because the reconstruction requires a lot of calculations, and when the number of underlying layers and the thickness of the layers are different Refactoring isn't necessarily feasible when you know it.

[0071] Figure 6 Three gratings G1, G2, G3 used in this method of the invention are shown.

[0072] Such as Figure 6 As mentioned, each of the gratings G1, G2, G3 includes a double-stripe structure. Gratings G1 and G2 with respect to width w 1 and w 2 The bars are mirror-symmetrical. G1 and G2 have equal but opposite asymmetries compared to the bistripe structure of equal linewidth. If these gratings are printed perfectly without coma aberrations, then using a normal incidence scatterometer, both gratings produce the same scatterometry signal S 1 and S 2 , since they are mirror-symmetric. Therefore, when...

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Abstract

detecting aberrations in a lithographic apparatus by printing a test pattern having at least one degree of symmetry which is sensitive to a particular aberration in the apparatus and using a scatterometer to obtain information about the aberrations . The test structure can include a double-strip grating, in which case the inner and outer duty cycles can be reconstructed to obtain information representing coma aberrations. Alternatively, hexagonal arrays of spots can be used, in which case the scatterometry data can be used to reconstruct the diameter of the spot representing the 3-wave aberration.

Description

technical field [0001] The present invention relates to inspection methods that can be used in the production of devices by photolithographic techniques and to methods of manufacturing devices using photolithographic techniques. Background technique [0002] In a production process using a lithographic projection apparatus, a pattern (eg in a mask) is imaged on a substrate at least partially covered by a layer of radiation-sensitive material (resist). Prior to this imaging step, the substrate can be subjected to various treatments such as priming, resist coating and soft baking. After exposure, the substrate can be subjected to additional processing such as post-exposure bake (PEB), development, hard bake and measurement / inspection of imaged features. Based on this series of processes, a single layer of a device such as an IC is patterned. This patterned layer can then be subjected to any of various treatments, such as etching, ion implantation (doping), metallization, oxi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G01M11/02H01J37/153H01J37/305H01L21/027
CPCG03F7/706H01L21/027
Inventor A·J·登博夫H·范德拉安A·J·J·范迪塞当克M·杜萨A·G·M·基尔斯
Owner ASML NETHERLANDS BV
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