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High-power laser diode array structure

A technology of laser diode and array structure, applied in lasers, laser devices, laser parts and other directions, can solve the problems of complex manufacturing process, low service life and high production cost, and achieve simple processing and assembly process, long service life, and production maintenance. low cost effect

Inactive Publication Date: 2009-12-09
HANS LASER TECH IND GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, LDA has disadvantages such as complex manufacturing process, low yield, high production cost, and low service life (the service life of LDA is generally promised by the manufacturer to be 10,000h, and the service life of single-core tubes is generally above 200,000h)

Method used

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  • High-power laser diode array structure
  • High-power laser diode array structure
  • High-power laser diode array structure

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Embodiment Construction

[0018] Such as figure 1 , Figure 2a , Figure 2b The slat-type single-core laser diode array structure shown includes: a cover plate 1, a single-core tube 2, a cavity 3, an insulating layer 4, a rubber sealing strip 5, an O-ring 6, and a screw 7. The single-core tube 2 is installed in the cavity 3, the cover plate 1 is covered on the cavity 3, the single-core tube 2 and the cavity 3 are sealed with an O-ring 6, and the cavity 3 and the cover plate 1 are sealed with Rubber sealing strip 5 is sealed. The single-core tube 2 uses a heat sink 21 with high thermal conductivity and easy processing as a heat dissipation base. It is composed of upper and lower parts 22 and 24. The lower part 24 is a cylinder, and the single-core section 8 is fixed on the bottom plane of the cylinder. , milling holes inside the cylinder (see Figure 5 ), the purpose is to shorten the distance between the single-core joint 8 and the cooling liquid, to improve cooling efficiency, the upper half 22 of...

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Abstract

The invention discloses a single-core section high-power laser diode array structure, which includes a cover plate, at least one single-core tube, a cavity and an insulating layer. At least one installation hole is provided on the bottom of the cavity, and the single-core tube includes a positioning anti-rotation part and Cylindrical mounting part, the bottom surface of the cylindrical mounting part is installed with a single-core section, the single-core tube is installed in the mounting hole of the cavity correspondingly, its positioning anti-rotation part is placed in the cavity, the cylindrical mounting part is correspondingly placed in the mounting hole, and the cover The board is covered on the cavity, and the insulating layer is also provided with holes corresponding to the installation holes of the cavity, and is correspondingly installed on the bottom surface of the cavity. The invention can replace the LDA single-chip high-power laser diode array structure, can meet the development trend of high power, high reliability, and long life required by laser processing equipment, and has the advantages of simple manufacturing process, high reliability, and long life. advantage.

Description

【Technical field】 [0001] The invention relates to a single-chip high-power laser diode array structure. 【technical background】 [0002] A common semiconductor laser diode array (Laser Diode Array, hereinafter referred to as LDA) is mainly formed by integrating multiple bars on a heat sink and connecting them in series. Take the derringer1×3 LDA produced by Guan Guo CEO Company as an example. It consists of three bars with a length of 10mm each. Each bar is a line array composed of multiple single-core nodes. Three bars The bars are integrated on a heat sink body, and the total output power is above 60W. Most LDAs currently on the market adopt this type of structure, and the output power of each single-core section in this type of LDA is generally around 2-3W. Single emitter high-power laser diode (Single Emitter, hereinafter referred to as single emitter) refers to integrating a high-power single emitter on a separate heat sink. The output power of the single emitter can c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/022H01S5/40H01S5/024
Inventor 高云峰肖岗蒲罡陈建飞杨延青
Owner HANS LASER TECH IND GRP CO LTD
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