Integrated semiconductor product comprising a metal-insulator-metal capacitor

Abstract

To fabricate an integrated semiconductor product with integrated metal-insulator-metal capacitor, first of all a dielectric auxiliary layer (6) is deposited on a first electrode (2, 3, 5). This auxiliary layer (6) is then opened up (15) via the first electrode. Then, a dielectric layer (7) is produced, and the metal track stack (8, 9, 10) for the second electrode is then applied to the dielectric layer (6). This is followed by the patterning of the metal-insulator-metal capacitor using known etching processes. This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.

Description

technical field [0001] The present invention relates to an integrated semiconductor product having interconnects and a metal-insulator-metal capacitor. In particular, the invention relates to an integrated semiconductor product having interconnects comprising aluminum as an essential structural component. Background technique [0002] High-frequency circuits in BIPOLAR, BICMOS, and CMOS technologies require integrated capacitors with a high voltage linearity, accurately settable capacitance, and especially low parasitic capacitance, but these have been The known MOS or MIS capacitors used so far have an unsatisfactory voltage linearity due to the voltage-induced space charge regions, and the short distance from the substrate also bears numerous parasitic capacitances value. [0003] These difficulties can be avoided by using what are known as metal-insulator-metal capacitors (MIM capacitors), which are usually arranged between two metal layers and are thus located at a grea...

AI Technical Summary

Problems solved by technology

And since the surface area specific capacitance value of a capacitor is determined by the thickness of the dielectric separation layer and the dielectric constant substantially, therefore, the surface area specific capacitance value of a capacitor can be obtained by using a capacitor having a high dielectric constant ( >8) to increase the dielectric, moreover, the insulating layer thinner than 60nm can also lead to an increase in surface area specific capacitance value

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