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ZnO base luminescent part with adulteration layer structure

A zinc oxide-based, light-emitting device technology, applied to laser parts, lasers, semiconductor devices, etc., to achieve the effect of easy formation and simple process

Inactive Publication Date: 2010-03-24
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, usually grown ZnO-based thin film materials have inherent oxygen vacancies and interstitial zinc atoms due to the deviation from the stoichiometric ratio, making the material n-type

Method used

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  • ZnO base luminescent part with adulteration layer structure
  • ZnO base luminescent part with adulteration layer structure
  • ZnO base luminescent part with adulteration layer structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Down-doped interlayer ZnO-based light-emitting devices. The chip material structure of this down-doped interlayer type ZnO-based light-emitting device is shown in the appendix figure 2 , characterized in that the doped interlayer 101 is located between the substrate 1 and the ZnO-based material buffer layer 2 . Its preparation process is, with Al 2 o 3 Substrate is taken as an example, substrate 1 is chemically cleaned, and the steps are: ultrasonic cleaning with toluene for 5 minutes, ultrasonic cleaning with acetone for 5 minutes, ultrasonic cleaning with ethanol for 5 minutes, and then recirculation once, and then rinsed with deionized water, and the substrate Put the bottom into H at a constant temperature of 160°C 2 SO 4 : HPO 3 = 3:1 (volume ratio) mixed solution for 10 minutes, and finally washed with deionized water, dried with high-purity nitrogen, and then used. Deposit a thin layer of doped interlayer 101 on the processed substrate, with a layer thickn...

Embodiment 2

[0019] Top-doped interlayer ZnO-based light-emitting devices. The chip material structure of the upper-doped interlayer type ZnO-based light-emitting device is shown in the appendix image 3 , characterized in that the doped interlayer 101 is located on the ZnO-based capping layer 6 . The growth and treatment of the corresponding layers in the preparation process are the same as in Example 1. Control the temperature and time of annealing, so that the dopant element diffused into the doped interlayer 101 on the ZnO-based material upper confinement layer 5 and ZnO-based material cap layer 6 is transformed into p-type; the advantage of this device structure is that the doped interlayer 101 It is deposited last and will not affect the growth quality of the previous ZnO-based material. At the same time, the thickness of the doped interlayer 101 can be appropriately thicker, up to about 150 nanometers.

Embodiment 3

[0021] Pattern-doped interlayer ZnO-based light-emitting device. The chip material structure of this pattern-doped interlayer type ZnO-based light-emitting device is shown in Figure 4. The figure given in the figure is a double-stripe shape, which is formed on a cleaned substrate by using a conventional photolithography process. After the pattern of the plastic mask, after the GaAs layer is covered by the conventional sputtering method, the mask photoresist is further removed, or the mask method is used to make the corresponding pattern mask and place it on the continuously grown epitaxial wafer. The doped interlayer 101 is deposited by methods such as sputtering. The chip material structure of this doped interlayer type ZnO-based light-emitting device can be the lower-doped interlayer-type ZnO-based light-emitting device of Embodiment 1, which can be called the lower-pattern doped interlayer-type ZnO-based light-emitting device; it can also be the one of Embodiment 2. The to...

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Abstract

The invention belongs to the semiconductor luminous device field, particularly relating to a ZnO-based luminous device with a doping sandwich structure, comprising a substrate, a ZnO-based material buffer layer, a lower ZnO-based material restriction layer, a ZnO-based material active layer, an upper ZnO-based material restriction layer, a ZnO-based material covering layer and a doping sandwich; the doping sandwich is arranged between the substrate and the ZnO-based materials buffer layer, or on the ZnO-based materials covering layer, the doping sandwich material comprises GaAs, InP or Zn3As2,with a thickness of five to one hundred and fifty nanometers and is prepared and obtained by adopting a sputtering method, a PLD method, a MBE method or an evaporation method and being annealed for one to five hours at four hundred to one thousand cent degrees. The doping sandwich can also be double bar-shaped, a figure, a letter, a chinese character, a graph or a lattice structure. The ZnO-basedluminous device can overcome the problem that p-type doping on ZnO-based materials is difficult by introducing the doping sandwich structure.

Description

technical field [0001] The invention belongs to the field of semiconductor light-emitting devices, in particular to a zinc oxide (ZnO)-based light-emitting device with a doped interlayer structure. Background technique [0002] GaN-based materials have wider application prospects in the field of solid-state lighting. The energy band gap and lattice constant of ZnO and GaN are very close, and they have similar photoelectric properties. However, compared with GaN, ZnO has higher melting point and exciton binding energy, higher exciton gain, lower epitaxial growth temperature, lower cost, easy etching and more convenient subsequent processing of epitaxial wafers, etc. Therefore, the successful development of ZnO-based light-emitting tubes and lasers may replace or partially replace GaN-based optoelectronic devices, and will have greater application prospects, especially ZnO purple and ultraviolet optoelectronic devices are more valued by people. [0003] Common electrical inj...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01S5/00H01L33/02H01L33/12H01L33/28
Inventor 夏晓川杜国同张源涛马艳张宝林
Owner JILIN UNIV
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