Ditching type capacitor and its producing method

Abstract

The method for fabricating canal type capacitor includes following steps: carrying out patternizing procedure by using patternized mask layer on substrate in order to form multiple canals in the substrate; forming low electrode in substrate of each canal surface; removing partial patternized mask layer to expose partial substrate on two sides of top portion of each canal; forming dielectric layer of capacitance on substrate and surface of each canal; being formed above the substrate, conductive layer fills in each canal, and covers dielectric layer of capacitance; removing patternized mask layer and partial conductive layer, and reserving partial conductive layer of covering the dielectric layer of capacitance in order to form up electrode.

Description

technical field [0001] The invention relates to a storage capacitor and a manufacturing method thereof, in particular to a trench capacitor and a manufacturing method thereof. Background technique [0002] With the continuous miniaturization of components, the size of the components is gradually reduced. For storage components with capacitors, the space for making capacitors is getting smaller and smaller. The trench capacitor storage element is an element that utilizes the space in the substrate to manufacture capacitors to gain area, so it is very in line with the current market demand. [0003] There is an existing manufacturing method of a trench capacitor, as shown in FIG. 1A , first forming a silicon oxide layer 102 and a silicon nitride layer 104 on a substrate 100 in sequence. Then, an etching process is performed to etch part of the silicon nitride layer 104 and the silicon oxide layer 102 to form several openings 106 exposing the surface of the substrate 100 . ...

AI Technical Summary

Problems solved by technology

However, the processes of the above-mentioned two patent documents are relatively complicated, and still cannot effectively solve the above-mentioned problems

Images