Method of manufacturing semiconductor device

A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of complex bipolar transistor structure, a lot of time, and complex manufacturing process.
CN101064280AInactive Publication Date: 2007-10-31FUJITSU MICROELECTRONICS LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
FUJITSU MICROELECTRONICS LTD
Publication Date
2007-10-31
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method of manufacturing a high-speed operable and broadband operable semiconductor device where a light-receiving element section, a CMOS element and a bipolar transistor element having a double polysilicon structure are formed on one chip. By performing the same conductivity type ion implantation, the same conductivity type diffusion layers (examples thereof include N-type diffusion layers, an anode diffusion layer, P-type well diffusion layer and collector diffusion layer as P-type diffusion layers, a cathode diffusion layer and collector contact diffusion layer as N-type diffusion layers, a source / drain diffusion layer and base Poly-Si diffusion layer as N-type diffusion layers, and a source / drain diffusion layer and base Poly-Si diffusion layer as P-type diffusion layers) are simultaneously formed in two or more regions among a light-receiving element region, CMOS element region and bipolar transistor element region of a semiconductor substrate or of an epitaxial layer over the semiconductor substrate.
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Description

Technical field

[0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a method of manufacturing a semiconductor device in which a light receiving element part, a CMOS element, and a bipolar transistor element are formed on one chip. Background technique

[0002] Generally, most light receiving elements are formed as a single element. Therefore, in order to process the received signal, the light receiving element part is used together with the signal processing element part. Alternatively, the light receiving element part and the signal processing semiconductor device are integrated in the same package. Thus, the light receiving element partly functions as a hybrid integrated circuit.

[0003] Against this background, a method of forming a light receiving element part and a signal processing element part on one chip has been proposed. According to the above method, miniaturization of the circuit can be achieved. Example...

Claims

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