Method for manufacturing semiconductor device using immersion lithography process with filtered air

Abstract

A method for manufacturing a semiconductor device using an immersion lithography process is disclosed. The semiconductor device is manufactured by filtering an air by using an amine removing chemical filter; and applying the filtered air onto a photoresist film formed on a semiconductor substrate (i) after washing the photoresist film with water and before an exposure process or (ii) after washing the photoresist film with water and before a post-baking process. These steps thereby effectively prevent water mark defects.

Description

technical field [0001] The invention relates to a method of manufacturing a semiconductor device using an immersion photolithography process. Background technique [0002] In order to manufacture smaller and smaller semiconductor devices, patterns have also become smaller and smaller. In order to obtain fine patterns, many studies have been done to improve photoresists and exposure machines. [0003] For the exposure machine, although KrF (248nm) or ArF (193nm) has been used as an exposure source in the exposure process, it is still trying to use such as F 2 (157nm) or EUV (13nm) and other short-wavelength light sources to increase the numerical aperture (NA). [0004] However, when applications such as F 2 When waiting for a new light source, a new exposure machine is required, which leads to increased production costs. Also, an increase in numerical aperture reduces the focus depth width. [0005] Recently, to solve these problems, an immersion photolithography proces...

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Problems solved by technology

However, this method requires additional equipment to provide high-purity nitrogen, resulting in additional costs and specialized management, without shortening the process time

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