Semiconductor light-receiving device
A technology of light-receiving components and semiconductors, which is applied in semiconductor devices, electrical components, photovoltaic power generation, etc., and can solve problems such as inability to drive APDs.
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Embodiment 1
[0047] FIG. 2 shows a cross-sectional view of Embodiment 1. FIG. Compared with the conventional APD in Fig. 1, Example 1 did not form p - type protection ring area. As in Figure 1, n + The type conductive layer 12 and the window layer 40 have the same energy band gap, and n + Compared with the conductive layer 12 and the window layer 40, the light absorbing layer 14 has a smaller energy band gap. The other configurations are the same as in FIG. 1 , and the same components are given the same reference numerals and their descriptions are omitted.
[0048] in p + Before edge breakdown occurs at the end portion (arc portion) of the type conductive region 42, in the carrier multiplying layer 20 of the light receiving region 58, the following conditions are carried out for obtaining any desired avalanche multiplication factor required by the semiconductor light receiving element. calculate.
[0049] Fig. 3 is a schematic diagram of the model used for the calculation. in undop...
Embodiment 2
[0077] FIG. 4 is a cross-sectional view of a semiconductor light-receiving element of Example 2. FIG. As opposed to FIG. 2 of Embodiment 1, n is provided on the electric field reduction layer 32 + Type InP doped layer 36 . A window layer 40 is arranged on the doped layer 36 . p + Type conduction region 42 is provided in contact with doped layer 36 . That is, p + The film thickness of the conductive region 42 is substantially the same as the film thickness of the window layer 40 . The other structures are the same as in the first embodiment, and the same components are given the same reference numerals and their descriptions are omitted.
[0078] FIG. 5 is a diagram for explaining the effect of the second embodiment. The doping concentration below the light receiving region 58 corresponding to the depth from the surface of the window layer 40 is shown. When making p in order to increase the multiplication ratio M + When the thickness of the p-type conductive region 42 i...
Embodiment 3
[0087] FIG. 6 is a cross-sectional view of a semiconductor light-receiving element of Example 3. FIG. 2 of Example 1, between the light absorbing layer 14 and the buffer layer 22, an n layer having a higher carrier concentration than that of the light absorbing layer 14 is provided. + type InGaAs electric field reducing layer 34 . In the electric field reducing layer 34, for example, the film thickness is 0.1 μm, n + Type doping concentration is 1×10 16 cm -3 . The other structures are the same as in the first embodiment, and the same components are given the same reference numerals and their descriptions are omitted.
[0088] 7( a ) to FIG. 8( b ) are schematic diagrams illustrating the effects of Example 3 in comparison with Example 1. FIG. Fig. 7 (a) is to show and the distance p of the light receiving region 58 of the APD of embodiment + A schematic diagram of the energy bandgap of the semiconductor layer corresponding to the depth of the surface of the type conducti...
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