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Picture element structure and its manufacturing method

A technology of pixel structure and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as limiting the design of storage capacitors and inability to have conductive properties, so as to avoid mask alignment errors and improve The effect of aperture ratio

Active Publication Date: 2008-01-02
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, although the polysilicon pattern 114, the gate insulating layer 120, the lower electrode pattern 134, the protective layer 140 and the upper electrode pattern 154 in FIG. The electrode pattern 134 is shielded and cannot have good conductive properties, so the design of the storage capacitor is relatively limited

Method used

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  • Picture element structure and its manufacturing method
  • Picture element structure and its manufacturing method
  • Picture element structure and its manufacturing method

Examples

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no. 1 example

[0036] 2A to 2K are the manufacturing method of the pixel structure according to the first embodiment of the present invention, wherein each drawing shows the top view, A-A' sectional view and B-B' sectional view of the relevant structure. Where possible, in order to clearly express the content of the illustrations, the symbols in the upper views of Figures 2A to 2K are used to mark the patterns defined in the manufacturing process, while the symbols in the cross-sectional views of Figures 2A to 2K are It is used to mark the material film layer that constitutes these patterns.

[0037] First, as shown in FIG. 2A , a substrate 202 is provided, and a semiconductor layer 210 and a first conductive layer 220 are sequentially formed on the substrate 202 . Here, the semiconductor layer 210 is, for example, a polysilicon layer, and the material of the first conductive layer 220 includes molybdenum, molybdenum / aluminum / molybdenum, titanium / aluminum / titanium, or combinations thereof. ...

no. 2 example

[0049] 3A to 3K are the manufacturing method of the pixel structure according to the second embodiment of the present invention, wherein each drawing shows the top view and the A-A' sectional view of the relevant structure. Where possible, in order to clearly express the content of the illustrations, the symbols in the upper views of Figures 3A to 3K are used to mark the patterns defined in the manufacturing process, while the symbols in the cross-sectional views of Figures 3A to 3K are It is used to mark the material film layer that constitutes these patterns.

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Abstract

The invention relates to a pixel structure and a relative production method, which mainly use semi-adjust mask or gray-adjust mask art to define semi-conductor pattern and data wire. In addition, The invention can use self-align method, via light resistance gray process and etching process or the like to product a light doping area with symmetry lengths, thereby effectively avoiding the mask align error when using mask to define light doping area. The invention can directly contact source pattern and drain pattern with the source area and drain area of semi-conductor pattern, to neglect the production of through hole. The invention can be used to produce the shared wire pattern around the pixel area, to improve the opening rate of pixel structure.

Description

【Technical field】 [0001] The present invention relates to a pixel structure and a manufacturing method thereof, and in particular to a pixel structure using a low-temperature polysilicon thin film transistor and a manufacturing method thereof. 【Background technique】 [0002] Early poly-silicon thin film transistors (poly-silicon TFT) were manufactured using solid phase crystallization (solid phase crystallization, SPC) manufacturing process. Since the manufacturing process temperature is as high as 1000 degrees Celsius, it is necessary to use a higher melting point quartz substrate. In addition, because the cost of quartz substrates is much higher than that of glass substrates, and the size of the substrates is limited, only small panels can be developed in the past (only about 2 to 3 panels). In recent years, with the continuous improvement of laser technology, the manufacturing process of excimer laser annealing (ELA) is also applied to the manufacturing process of polysi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/84H01L21/768H01L27/12H01L23/522
Inventor 陈明炎陈亦伟郑逸圣廖盈奇
Owner AU OPTRONICS CORP