Silicon MEMS piezoresistance type acceleration sensor

An acceleration sensor and piezoresistive technology, applied in the field of micromechanical sensors, can solve the problems of increasing processing difficulty and reducing sensor accuracy, and achieve the effects of easy three-axis integration, light weight, and reducing processing difficulty
CN101118250BActive Publication Date: 2012-07-04THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
0 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
Publication Date
2012-07-04

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The present invention discloses a silicon MEMS piezoresistive acceleration sensor which belongs to the art of micro-mechanical sensors. The present invention comprises a silicon frame, a mass block, and a varistor; wherein the mass block is arranged in the silicon frame, sensitive girders in symmetry are arranged between the left and the right sides of the mass block and the silicon frame, a pair of symmetric torsion girders is arranged between a center position of the front and rear sides of the mass block and the silicon frame; the width of the torsion girders in the X direction is less than that of the mass block in the X direction, the height of the torsion girders in the Z direction is larger than that of the sensitive girders in the Z direction, and the sensitive girders are provided with the varistor for detecting the stress size. The piezoresistive acceleration sensor provided by the present invention is a micro sensor using the voltage dependent resistor that is arranged on the upper surface of the structure to test the lateral acceleration signal; can avoid the sophisticated technique making the voltage dependent resistor on the profile of the structure; reduces the difficulty of processing; improves the accuracy, consistency and good yield of resistor processing; and easily realizes three-axial integration. The sensor has the advantages of small body, light weight, small crossover coupling, high reliability, low cost and easy combination.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention relates to an acceleration sensor made by adopting the piezoresistive principle, which belongs to the field of micromechanical sensors. Background technique

[0002] The micro-acceleration sensor is a sensor made by micro-machining technology. According to different working principles, micro-acceleration sensors can be divided into capacitive, piezoresistive, heat flow, tunneling and resonance. Compared with other forms of micro-acceleration sensors, piezoresistive micro-acceleration sensors have been widely used because of their simple processing technology, convenient testing and low cost. The piezoresistive acceleration sensor is based on the piezoresistive effect of semiconductors and consists of a mass block and a cantilever beam. The manufacture of piezoresistors is the key technology to realize MEMS piezoresistive acceleration sensors. The current processing technology is mainly to manufacture piezoresistors on the upper surface ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More