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Microlenses of cmos image sensor and method for fabricating the same

A technology of image sensor and microlens, which is applied in the direction of photographic plate-making process, instrument, electric solid device, etc. on the pattern surface, can solve the problems of limiting the reproducibility of microlens, standardization of focal length of microlens, standardization of difficult reflow treatment, etc., and achieves reproducibility performance optimization, crosstalk minimization, and precise control

Inactive Publication Date: 2011-05-18
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Difficulty standardizing microlens focal lengths due to variations in the manufacturing process, limiting microlens reproducibility
For example, it is difficult to standardize reflow processing

Method used

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  • Microlenses of cmos image sensor and method for fabricating the same
  • Microlenses of cmos image sensor and method for fabricating the same
  • Microlenses of cmos image sensor and method for fabricating the same

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Embodiment Construction

[0017] Such as Figure 2A As shown, color filter array 100 and / or planarization layer 200 are formed on and / or over a semiconductor substrate, according to embodiments.

[0018] Silicon oxide (SiO 2 ) layer 400 is formed on and / or over planarization layer 200 and / or color filter array 100 .

[0019] A plurality of metal wiring layers for electrically connecting circuit elements are formed on and / or over the semiconductor substrate. Circuit elements (eg, a photodiode and / or MOS transistors) are formed on and / or over the semiconductor substrate. Multiple interlayer dielectric layers may be formed to electrically isolate circuit elements and / or metal wiring layers. A color filter array 100 (eg, including red filter 100a, green filter 100b, and / or blue filter 100c) is formed on and / or over the upper interlayer dielectric layer. Flattening layer 200 is formed on and / or over color filter array 100 and compensates for height differences between different filters.

[0020] Accord...

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PUM

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Abstract

The invention relates to microlenses of a CMOS image sensor and a method of fabricating microlenses. The method includes at least one of the following steps: Forming a color filter array including a plurality of color filters on a semiconductor substrater. Forming on and / or over the color filter array a flattening layer to compensate for height differences between color filters. Forming a silicon oxide layer on and / or over the flattening layer. Forming on and / or over the silicon oxide layer, a plurality of photoresist patterns which correspond to the color filters, wherein the photoresist patterns may be separated from each other. Forming a plurality of CxFy-based polymer bumps surrounding the plurality of photoresist patterns using at least one process gas (e.g. C5F8, CH2F2, Ar, and / or O2). Etching the plurality of polymer bumps, the plurality of photoresist patterns, and the silicon oxide layer using an etching recipe having substantially the same etching selection ratio between the plurality of polymer bumps, the plurality of photoresist patterns, and the silicon oxide layer.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2006-0072040 (filed on Jul. 31, 2006), the entire content of which is hereby incorporated by reference. technical field [0002] The invention relates to a microlens of a CMOS image sensor and a manufacturing method thereof. Background technique [0003] An image sensor is a device that receives light at a photodiode or phototransistor and uses an analog-to-digital converter (ADC) to convert the light into an electrical digital image signal. Two different image sensors are Complementary Metal Oxide Semiconductor (CMOS) devices and Charge Coupled Devices (CCD). CMOS devices can be used in small cameras with low power. In a CMOS device, a microlens (which may be exposed to air) focuses light onto a photodiode. A photodiode converts the collected light into an electrical signal. Multiple transistors can display the converted electrical signal as an image. [0004] A CMOS device may include a photo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/00G03F1/00H01L27/14H01L27/146
CPCH01L27/14643H01L27/14621H01L27/14627H01L27/14685H01L27/146
Inventor 赵殷相
Owner DONGBU HITEK CO LTD
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