Polishing method for zinc oxide single crystal substrate level substrate

A technology of zinc oxide single crystal and zinc oxide, which is applied to polishing compositions containing abrasives, grinding/polishing equipment, surface polishing machine tools, etc., can solve the problem that no ZnO single crystal substrate polishing process and process have been found, and the disclosure And other issues

Inactive Publication Date: 2008-02-20
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, no systematic ZnO single crystal substrate polishing process and process have been disclosed

Method used

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  • Polishing method for zinc oxide single crystal substrate level substrate

Examples

Experimental program
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Effect test

Embodiment 1

[0031] 1. Chamfer the cut zinc oxide wafer first, and then put it on the heating platform with the bare glue board to heat at a temperature of 120°C. Bond the zinc oxide wafer to the bare glue board evenly and firmly with an adhesive.

[0032] 2. Leveling and thinning: On the surface grinding machine, a cast iron grinding disc is used, and the abrasive material is silicon carbide (SiC) suspension (SiC:H 2 O weight ratio 1: 20), the pressure is set to 60g / cm 2 , Speed: 70 rpm, flow rate of polishing liquid: 150ml / min, when the thickness reaches 0.65mm, the grinding rate is relatively high, the grinding time is 2h, the surface of the wafer has no knife marks, and is relatively smooth.

[0033] 3. Mechanical polishing: On the grinding machine, use polyurethane grinding disc, first use W7 boron carbide (B 4 C) the suspension is used as a grinding liquid, (B 4 C:H 2 O weight ratio is 1:20), flow rate is 10ml / min, pressure: 70g / cm 2 , rotating speed: 100 rpm, grind to a thicknes...

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Abstract

The invention relates to a polishing method for the zinc oxide monocrystal underlay uropatagia. The method comprises the following steps such as hanging wall, skiving, mechanical polishing, chemical polishing and cleaning. The invention also relates to a special binder, grinding liquid, polishing method and cleaning method in the process for processing the zinc oxide monocrystal underlay uropatagia. By utilizing the invention, the zinc oxide monocrystal underlay uropatagia which is super smooth, super neat and super clean can be obtained; and the invention can meet the demands of the growth of the extending film of ZnO.

Description

technical field [0001] The invention relates to a zinc oxide single crystal, in particular to a polishing method for a zinc oxide single crystal substrate level substrate. Background technique [0002] Zinc oxide single crystal (ZnO) is a wide bandgap semiconductor material with a direct bandgap. It has many excellent properties. The key basic materials of ZnO and GaN epitaxial films and devices have increasingly shown their important research value and potential application value. The era of using ZnO semiconductor materials to make practical optoelectronic devices is coming, and it will bring unlimited industrial application prospects. ZnO crystal is also a key substrate material for excellent ZnO, GaN epitaxial thin films and optoelectronic devices, and the quality of its surface polishing is closely related to the performance of ZnO, GaN epitaxial thin films and devices. [0003] At present, no systematic ZnO single crystal substrate polishing process and process have ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/04B24B29/00H01L21/304C09G1/02C09G1/04
Inventor 陈光珠杭寅兰志成李志鸿华如江张连翰何明珠李抒智杨卫桥
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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