Manufacturing method of gate oxidation films
A technology of gate oxide film and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of difficulty in oxide film 6a and reduced oxidation efficiency, and achieve the effect of improving oxidation efficiency
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[0092] According to the first embodiment of the present invention, the ion implantation layer 18 or 18a is formed by the ion implantation process shown in FIG. 14 to 2×10 16 ions / cm 2 Argon ions were implanted at a dose of 15-25keV at an accelerating voltage of 6×10 14 to 1×10 15 ions / cm 2 The dose of fluorine ions is implanted, and argon ions or fluorine ions are implanted in two steps; thus, the ion implantation layer 18 or 18a is formed from a relatively deep region of the surface of the silicon substrate. Thus, when cleaning with an etching effect is performed in the cleaning process shown in FIG. area formation. Thereafter, when the thermal oxidation process shown in FIG. 5 was performed, the implanted ions were slightly diffused to the outward direction; however, it was difficult to diffuse ions from relatively deep regions of the silicon surface, and overall the decrease in ion density was significant. Less. Therefore, the oxidation efficiency in the element port...
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