Manufacturing method of grating oxide film
A gate oxide film and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of difficulty in oxide film 6a and reduced oxidation efficiency, and achieve the effect of improving oxidation efficiency
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[0084] According to the first embodiment of the present invention, under one of the following conditions by figure 2 The ion implantation process shown in forms the ion implantation layer 18 or 18a, that is, under the acceleration voltage of 20-50keV, the 14 to 2×10 16 ions / cm 2 Argon ions were implanted at a dose of 15-25keV at an accelerating voltage of 6×10 14 to 1×10 15 ions / cm 2 The dose of fluorine ions is implanted, and argon ions or fluorine ions are implanted in two steps; thus, the ion implantation layer 18 or 18a is formed from a relatively deep region of the surface of the silicon substrate. Therefore, when Figure 4 When cleaning with an etching effect is performed in the illustrated cleaning process, the ion-implanted layer 18 or 18a will not be removed by the etching effect because the ion-implanted layer 18 or 18a is formed from a relatively deep region of the silicon substrate surface. Thereafter, when performing Figure 5 During the thermal oxidation ...
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