Vertical BJT, manufacturing method thereof

Abstract

A vertical BJT with maximum current gain in the photodiode region and its manufacturing method, the vertical BJT includes first and second collector regions located in different epitaxial layers; an emitter region inserted in the first and second collector regions Between; a base region formed on the first collector region and the emitter region, and the second collector region and the emitter region. According to an embodiment, since a BJT may be formed together with a photodiode, and a collector current flows up and down based on a double base structure, the magnitude of current may be increased.

Description

technical field [0001] The present invention relates to a vertical BJT (bipolar junction transistor) and its manufacturing method. Background technique [0002] Generally, an image sensor is a semiconductor device that converts an optical image into an electrical signal. The image sensor may be a charge-coupled device (CCD) image sensor in which individual metal-oxide-semiconductor (MOS) capacitors are placed in close proximity to allow charge carriers to charge or discharge charge carriers from the capacitor. A Complementary Metal Oxide Semiconductor (CMOS) image sensor continuously detects an output by providing MOS transistors corresponding to the number of pixels using a switching mode. CMOS technology can integrate peripheral devices such as control circuits and signal processing circuits into the sensor. A CMOS image sensor may include a photodiode and a MOS transistor in each unit pixel to detect signals in a switching mode and form an image. [0003] According to ...

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Problems solved by technology

Since the thickness and width of a single base layer are determined by the manufacturing process, the best current gain of the vertical BJT device cannot be obtained through the CMOS process

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