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High efficient phosphor conversion light emitter and its making process

A technology for a light-emitting device and a manufacturing method, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve problems such as difficult control, difficulty in chip scale, and uniform distribution of powder

Active Publication Date: 2010-05-19
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is not easy to achieve uniform distribution of powder by controlling the electric field distribution and charge state of inorganic powder on the chip scale, especially on the side of the chip.

Method used

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  • High efficient phosphor conversion light emitter and its making process
  • High efficient phosphor conversion light emitter and its making process
  • High efficient phosphor conversion light emitter and its making process

Examples

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Embodiment Construction

[0015] figure 1 is a schematic diagram showing the structure of a light emitting device in a preferred embodiment of the present invention. The light-emitting device 10 disclosed in the present invention includes a substrate 11 , a semiconductor structure 12 with a light-emitting layer, an optical filter layer 13 and a fluorescence conversion layer 14 . The substrate 11 can be an opaque substrate, such as a semiconductor substrate, a metal substrate, a combination of the above materials or other opaque materials, and the material of the opaque substrate is, for example, Si, GaN / Si, GaAs or a combination thereof. The substrate 11 can also be a transparent substrate material, such as glass, sapphire, SiC, GaP, GaAsP, ZnSe, ZnS or ZnSSe. The semiconductor structure 12 with the light-emitting layer is, for example, a vertical structure (electrical contacts are on different sides) or a horizontal structure (electrical contacts are on the same side), and can generate light with the...

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Abstract

The invention discloses an irradiance device structure and its manufacturing method. The device comprises a substrate on which a semiconductor structure with a luminescent layer is mounted. The opticsfilter layer with fluorescence conversion on its upward side is on the top of the semiconductor structure. The manufacturing method of the irradiance device provided in the invention comprises: forming a semiconductor structure with a luminescent layer on top of the substrate, forming an optics filter layer on top of the semiconductor structure and forming a fluorescence conversion layer on top of the optics filter layer.

Description

technical field [0001] The invention relates to a light-emitting device and a manufacturing method thereof, in particular to a light-emitting device with an optical filter layer and a fluorescence conversion layer and a manufacturing method thereof. Background technique [0002] At present, the manufacturing technologies of white light-emitting diodes (Light-emitting diodes, LEDs) can be mainly divided into single-chip (chip) type and multi-chip type. The multi-chip type uses red, blue, and green LEDs to mix the light emitted by each into white light. The advantage of this method is that the required light color can be adjusted according to the needs, but because multiple LEDs are used at the same time, the cost is high, and because of The materials used to manufacture three-color LEDs are different, and their input voltages (Vf) are different, requiring three sets of circuits to control the current. In addition, the decay rate, temperature characteristics and lifetime of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/48H01L33/50
Inventor 王健源吕志强谢明勋
Owner EPISTAR CORP