Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Parts for substrate processing apparatus and protection film forming method

A technology of substrate processing device and protective film, which is applied in electrical components, semiconductor/solid-state device manufacturing, ion implantation and plating, etc., can solve the problems of lack of alumite protective film and low heat resistance of alumite protective film, etc. Achieve the effect of suppressing residual stress, preventing particle generation, and ensuring openings

Inactive Publication Date: 2011-07-20
TOKYO ELECTRON LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In high-power plasma treatment, the temperature of the radiator plate rises. However, since the heat resistance of the alumite protective film is generally low, in this plasma treatment, on the alumite protective film of the radiator plate, Cracks are formed, and part of the anti-corrosion protective film is missing, resulting in particles

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Parts for substrate processing apparatus and protection film forming method
  • Parts for substrate processing apparatus and protection film forming method
  • Parts for substrate processing apparatus and protection film forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0086] Next, embodiments of the present invention will be described in detail.

[0087] Example

[0088] pass Image 6 The aluminum corrosion protection film 57 is formed on the surface of the cooling plate 36, and the cooling plate 36 is assembled into the substrate processing apparatus 10. Next, a wafer W having a thermally oxidized film is prepared, and the wafer W is subjected to HARC processing by the substrate processing apparatus 10 . In this HARC process, the pressure in the chamber 11 is set at 3.33 Pa (25 mTorr), the high-frequency power of 3300 W is supplied to the ceiling electrode plate 35, and the high-frequency power of 3800 W is supplied to the susceptor 12. C 5 f 8 gas, Ar gas and O 2 Process gas composed of gases (C 5 f 8 gas, Ar gas and O 2 The flow ratio of the gas is 29 / 750 / 47), and He gas at 2.00MPa (15Torr) and He gas at 5.33MPa (40Torr) are supplied to the central part and peripheral part of the wafer W through the gap between the adsorption sur...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a protection film forming method for component for substrate processing apparatus which can prevent particles from being produced through chipping of a film. A cooling plate (36) exposed with aluminum material (56) on the surface is connected with the anode of a direct current power source, and immersed in a solution consisting oxalic acid, and the surface of the cooling plate (36) is oxidized (step S61), then, the cooling plate (36) formed with alumite protective film (57) on the surface is immersed in the boiling water for 5 to 10 minutes (step S62).

Description

technical field [0001] The present invention relates to a component for a substrate processing apparatus and a method for forming a protective film, and particularly relates to a component for a substrate processing apparatus that performs plasma processing on a substrate. Background technique [0002] As a substrate processing apparatus for performing predetermined processing on a wafer as a substrate, there are known film forming apparatuses that perform film formation processing such as CVD or PVD, or etching apparatuses that perform etching using plasma. In recent years, as the diameter of the wafer has increased, the size of the substrate processing apparatus has also increased, and an increase in the weight of the apparatus has also become a problem. Therefore, light-weight aluminum members are increasingly used as members for structural components of substrate processing apparatuses. [0003] However, in general, aluminum members are inferior in corrosion resistance ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C25D11/04H01L21/02H01L21/08H01L21/205H01L21/3065
CPCC23C14/564C23C16/4404
Inventor 三桥康至大久保智也
Owner TOKYO ELECTRON LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com