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Parts for substrate processing apparatus and protection film forming method

A substrate processing device and a technology for a protective film, which are applied in electrical components, semiconductor/solid-state device manufacturing, ion implantation and plating, etc., can solve the problems of low heat resistance of alumite protective film and lack of alumite protective film, etc. Achieve the effect of suppressing residual stress, preventing particle generation, and ensuring openings

Inactive Publication Date: 2008-04-02
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

In high-power plasma treatment, the temperature of the radiator plate rises. However, since the heat resistance of the alumite protective film is generally low, in this plasma treatment, on the alumite protective film of the radiator plate, Cracks are formed, and part of the anti-corrosion protective film is missing, resulting in particles

Method used

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  • Parts for substrate processing apparatus and protection film forming method
  • Parts for substrate processing apparatus and protection film forming method
  • Parts for substrate processing apparatus and protection film forming method

Examples

Experimental program
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Embodiment

[0086] Next, embodiments of the present invention will be described in detail.

[0087] Example

[0088] The alumite protective film 57 is formed on the surface of the heat sink 36 by the process shown in FIG. 6 , and the heat sink 36 is incorporated into the substrate processing apparatus 10 . Next, a wafer W having a thermally oxidized film is prepared, and the wafer W is subjected to HARC processing by the substrate processing apparatus 10 . In this HARC process, the pressure in the chamber 11 is set at 3.33 Pa (25 mTorr), the high-frequency power of 3300 W is supplied to the ceiling electrode plate 35, and the high-frequency power of 3800 W is supplied to the susceptor 12. C 5 f 8 gas, Ar gas and O 2 Process gas composed of gases (C 5 f 8 gas, Ar gas and O 2 The flow ratio of the gas is 29 / 750 / 47), and He gas at 2.00MPa (15Torr) and He gas at 5.33MPa (40Torr) are supplied to the central part and peripheral part of the wafer W through the gap between the adsorption s...

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Abstract

The present invention provides a protection film forming method for component for substrate processing apparatus which can prevent particles from being produced through chipping of a film. A cooling plate (36) exposed with aluminum material (56) on the surface is connected with the anode of a direct current power source, and immersed in a solution consisting oxalic acid, and the surface of the cooling plate (36) is oxidized (step S61), then, the cooling plate (36) formed with alumite protective film (57) on the surface is immersed in the boiling water for 5 to 10 minutes (step S62).

Description

technical field [0001] The present invention relates to a component for a substrate processing apparatus and a method for forming a protective film, and particularly relates to a component for a substrate processing apparatus that performs plasma processing on a substrate. Background technique [0002] As a substrate processing apparatus for performing predetermined processing on a wafer as a substrate, there are known film forming apparatuses that perform film formation processing such as CVD or PVD, or etching apparatuses that perform etching using plasma. In recent years, as the diameter of the wafer has increased, the size of the substrate processing apparatus has also increased, and an increase in the weight of the apparatus has also become a problem. Therefore, light-weight aluminum members are increasingly used as members for structural components of substrate processing apparatuses. [0003] However, in general, aluminum members are inferior in corrosion resistance ...

Claims

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Application Information

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IPC IPC(8): C25D11/04H01L21/02H01L21/08H01L21/205H01L21/3065
CPCC23C14/564C23C16/4404
Inventor 三桥康至大久保智也
Owner TOKYO ELECTRON LTD
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