Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Technique for reducing particle in reaction chamber

A process method and reaction chamber technology, applied in the direction of metal material coating process, gaseous chemical plating, coating, etc., can solve the problem of particle pollution, and achieve the effect of ensuring the production yield, the process method is easy, and the quantity is reduced

Inactive Publication Date: 2008-04-02
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The invention provides a process method for reducing particles in a reaction chamber. By forming an adhesion barrier layer inside the reaction chamber, the number of falling particles in the reaction chamber is reduced, and the problems that occur in the existing reaction chamber during production and operation are improved. particle pollution problem

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Technique for reducing particle in reaction chamber
  • Technique for reducing particle in reaction chamber
  • Technique for reducing particle in reaction chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0027] The processing method of the present invention can be widely applied in many applications, and should not be interpreted as being only applicable to the processing of the chemical vapor deposition reaction chamber, and the method of the present invention is also applicable to other equipment to reduce the problem of particle pollution . The following is a specific description of the processing method of the present invention through a preferred embodiment, certainly the present invention is not limited to this specific embodiment, and the general replacements well known to those of ordinary skill in the art are undoubtedly included in the protection of the present invention within range.

[0028] In a first embodiment of the pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a process for reducing particles in reaction chamber, which includes the following steps that: at least one piece of wafer with the surface containing adhering blocking material is sent to the reaction chamber; the reaction chamber undergoes heating and vacuum treatment; the wafer undergoes plasma treatment; the wafer is taken out. The invention can form an adhering blocking layer in the reaction chamber by the method, and reduces the quantity of the particles dropping off in the reaction chamber, which solves the particle pollution problem occurring in the process of production and operation of the prior reaction chamber.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a process method for reducing particles in a reaction chamber. Background technique [0002] As the critical dimensions of devices shrink, the control of contamination on the wafer surface becomes more and more critical. If pollution sources such as particles are introduced during the production process, it may cause open circuit or disconnection of the circuit. Therefore, in semiconductor process manufacturing, how to avoid pollution in process manufacturing must be paid attention to. With the improvement of equipment automation in production, the interaction between personnel and products becomes less, and the focus of preventing particles in production has been more focused on the particles produced by production equipment. If the equipment works for a long time, some attachments will accumulate on the internal components, especially the attachments accumu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/205H01L21/285H01L21/31H01L21/3205C23C16/00
Inventor 汪钉崇蓝受龙林忠明
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com