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Method of implementing high-isolation low-insertion loss RF switch

A radio frequency switch, high isolation technology, applied in the field of radio frequency switch circuits or integrated circuits, which can solve the problems of complex technology and narrow operating frequency band

Inactive Publication Date: 2008-04-09
王东方
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of these two methods is that the operating frequency band is narrow
In addition, there is a parallel distributed field effect transistor method, which is technically complex and requires special design of semiconductor switching devices

Method used

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  • Method of implementing high-isolation low-insertion loss RF switch
  • Method of implementing high-isolation low-insertion loss RF switch
  • Method of implementing high-isolation low-insertion loss RF switch

Examples

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Embodiment Construction

[0016] Figure 1 is the basic structure of an ordinary radio frequency switch circuit, where A and B are field effect transistors, and both ends of 1 and 2 are connected to the radio frequency channel. When the radio frequency switch is turned on, the state of the corresponding field effect tube is: tube A is on, and tube B is off; when the radio frequency switch is off, the state of the corresponding field effect tube is: tube A is off and tube B is on. Due to the non-ideality of the device, the switch tube is approximately equivalent to a small resistance when it is turned on, and is approximately equivalent to a small capacitor when it is turned off. The RF switch with this structure generally has an insertion loss of about 0.5-1dB when it is turned on, and an isolation of about 20dB when it is turned off. The traditional effective way to improve the isolation is parallel resonant inductor. As shown in Figure 2, an inductor L is connected in parallel next to the field effect...

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Abstract

A method for realizing RF switching circuit of high-degree insulation and low insertion loss comprises a phase offset channel arranged in parallel connection with regular switch device. The phase offset channel is composed of a closed switch device and a 180 degree phase delayer. The 180 degree phase delayer can be a half-wavelength RF transmission line or a 180 degree phase shifter. Due to the phase delaying and impedance converting functions of the half-wavelength RF transmission line, two insulation peak values, namely phase offset and parallel resonance can be generated within the working band frequency, thus enhancing the degree of insulation and ensuring larger working band. The 180 degree phase shifter may realize phase offset with a very wide frequency band to further broaden the working bandwidth. The method can be used in RF switch integrated circuit or regular circuit.

Description

technical field [0001] The invention relates to a radio frequency switch circuit or an integrated circuit Background technique [0002] In a wireless or mobile communication system, a radio frequency switch (RF switch) is often used to select a radio frequency channel. For example, radio frequency switches are used to select the receiving and transmitting channels, so as to realize the reception and transmission of wireless signals under the condition of sharing the antenna; in order to increase the anti-jamming performance in military broadband radio stations, radio frequency switches are used to select filters of different frequency bands. In these systems, RF switches are generally required to have insertion loss as low as possible and high isolation. Due to the non-ideality of the switching device, the RF switching circuit has a certain insertion loss and the isolation is limited. It is difficult to achieve high isolation characteristics under low insertion loss. The t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K17/16H03K17/76H03K17/693
Inventor 王东方
Owner 王东方
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