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Semiconductor probe possessing high resolution resistance tip and method for manufacturing same

A semiconductor and probe technology, applied in the field of semiconductor probes and their manufacturing

Inactive Publication Date: 2011-11-09
SAMSUNG ELECTRONICS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the conductive area in the inclined surface is reduced, causing the spatial resolution of the resistive region 13 to deteriorate.
In addition, in the manufacturing process, the portion where the probe will be formed after performing the etching process may be damaged due to relatively high implantation energy of about 300keV

Method used

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  • Semiconductor probe possessing high resolution resistance tip and method for manufacturing same
  • Semiconductor probe possessing high resolution resistance tip and method for manufacturing same
  • Semiconductor probe possessing high resolution resistance tip and method for manufacturing same

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Embodiment Construction

[0030] The present invention will now be described more fully hereinafter with reference to the accompanying drawings in which embodiments of the invention are shown. In the drawings, the thicknesses of layers and regions are exaggerated for clarity.

[0031] figure 2 is a cross-sectional view of a tip portion of a semiconductor probe with a high-resolution tip having a doping control layer according to an embodiment of the present invention.

[0032] refer to figure 2 , the resistance tip 20 is formed at one end of the cantilever 21 , the tip 20 is formed of a silicon substrate doped with a first impurity and protrudes upward from the surface of the cantilever 21 in the vertical direction. The resistance tip 20 has a low-resistance region 24 lightly doped with a second impurity having a different polarity from the first impurity. The doping control layer 25 is formed on both sides of the protruding portion of the low resistance region 24 , above the surface of the cantil...

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Abstract

The invention discloses a semiconductor probe and a manufacturing method thereof. The semiconductor probe comprises a cantilever doped by a first impurity, a resistor tip protruding from one end of the cantilever and doped by a second impurity; a doping control layer formed on both sides of the protrusion portion of the resistor tip; and a first electrode and a second electrode heavily-doped by the second impurity under the control of the doping control layer.

Description

technical field [0001] The present invention relates to a semiconductor probe and a manufacturing method thereof, more particularly, to a semiconductor probe having a high-resolution resistive tip and a manufacturing method of the semiconductor probe, and the high-resolution resistive tip has a A doping control layer that controls the distribution of impurities. Background technique [0002] As the demand for portable devices such as mobile phones has increased, the demand for small-sized, highly integrated nonvolatile recording media has also increased. It is difficult to reduce the size of a conventional hard disk and to increase the degree of integration of a conventional flash memory. Therefore, in recent years, many studies have focused on information storage devices using scanning probes. [0003] Probes are used in various scanning probe microscopy (SPM) techniques. For example, probes are used in scanning tunneling microscopes (STM) to read information by detectin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G12B21/02G11B9/00G01Q70/00
Inventor 丁柱焕金俊秀申炯澈洪承范
Owner SAMSUNG ELECTRONICS CO LTD