Polishing pad and chemico-mechanical polishing method
Patent Information
- Authority / Receiving Office
- CN Β· China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SEMICON MFG INT (SHANGHAI) CORP
- Publication Date
- 2008-06-04
- Estimated Expiration
- Not applicable Β· inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a semiconductor chemical mechanical polishing process, in particular to a chemical mechanical polishing pad and a chemical mechanical polishing method for high flatness of the wafer surface. Background technique
[0002] The chemical mechanical polishing (CMP) process was introduced into the integrated circuit manufacturing industry by IBM in 1984, and was first used in the planarization of the intermetallic insulating dielectric (IMD) in the subsequent process, and then used for tungsten (W) through the improvement of equipment and processes. planarization for shallow trench isolation (STI) and copper (Cu) planarization. Chemical Mechanical Polishing (CMP) is the fastest growing and most important technology in IC manufacturing process in recent years.
[0003] The CMP polishing process uses mechanical force to act on the surface of the wafer in the atmospheric environment of the clean room, and generates power to break and c...