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Focused ion beam microscope sample stage and method of use thereof

A technology of focused ion beam and sample stage, which is applied in the direction of material analysis, surface/boundary effects, instruments, etc. by using radiation, can solve the problems of long time consumption, achieve the effect of improving work efficiency, convenient positioning operation, and saving working time

Inactive Publication Date: 2011-05-04
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When a sample is processed, it needs to be searched through the display to process another sample, which takes a long time

Method used

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  • Focused ion beam microscope sample stage and method of use thereof
  • Focused ion beam microscope sample stage and method of use thereof
  • Focused ion beam microscope sample stage and method of use thereof

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Embodiment Construction

[0016] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0017] The focused ion beam microscope sample stage of the present invention is applied to the placement of silicon wafer samples of the focused ion beam microscope in the technical field of integrated circuit failure analysis. A groove is engraved on the edge of the sample stage, and a plane coordinate is set with the groove as the origin Axis, on the surface of the sample stage along the X and Y directions of the coordinate axis, several thin groove lines with consistent intervals are respectively engraved to form dozens of squares of equal size, and identifiers are marked inside the squares. The identifier can use numbers, letters or graphics.

[0018] A small hole is provided in the center of the square to facilitate the external monitor to determine the position of the square.

[0019] The sample stage can be set in the shape of...

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Abstract

The invention discloses a focusing ion bam microscope specimen stage, wherein the edge of the specimen stage is provided with a groove, a horizontal coordinate axis which takes the groove as the base point is set up, the surface of the specimen stage is provided with a plurality of thin trough lines with the same spacing along the X and the Y directions of the coordinate axis, forming tens of squares with same size, of which inner parts are marked with identifiers. The center of the square is provided with a small hole which is convenient for externally connecting the display and determining the position of the square. The invention also discloses a method of application of the specimen stage. The focusing ion bam microscope specimen stage of the invention has the advantages of saving operating time and improving working efficiency, along with highly efficient and easy positioning operation.

Description

technical field [0001] The invention relates to the technical field of semiconductor testing and analysis, in particular to a sample stage of a focused ion beam microscope and a method for using the same. Background technique [0002] Focus Ion Beam Microscope (FIB) is an ion beam cutting and processing instrument. The traditional FIB has the function of cutting and making sample sections. At present, the focused ion beam microscope is widely used in the semiconductor electronics industry and the IC industry. Its main uses are: (1) Cutting and manufacturing of micro-sections of semiconductor chips; (2) Modification of chip electronic circuits; (3) Preparation of transmission electron microscope samples . The working principle of FIB is to effectively control the removal of materials by impacting the sample with a heavy metal ion. It uses high-energy ions to enter the solid sample, elastically or inelastically scatter with the atomic nucleus and extranuclear electrons of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/18G01N13/10H01J37/26H01L21/66G01Q30/20
Inventor 裘莺
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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