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Particle detector for secondary ions and direct and or indirect secondary electrons

A technology of secondary electrons and secondary ions, which is applied to the detailed information of electron multipliers, material analysis using wave/particle radiation, instruments, etc., which can solve the problems of occupying space and increasing system costs

Active Publication Date: 2008-06-04
EL MUL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Multiple detectors add to system cost and take up space in the vacuum system that could be used for sample handling

Method used

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  • Particle detector for secondary ions and direct and or indirect secondary electrons
  • Particle detector for secondary ions and direct and or indirect secondary electrons
  • Particle detector for secondary ions and direct and or indirect secondary electrons

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Embodiment Construction

[0052] Two decomposed forms of the invention are first described, which are then combined into the basic form of the EISE3 detector.

[0053] 1. The first form is the configuration shown in Figure 2, which can measure ions or SE by switching the voltage on the electrodes. The structure has a skewed collection of sparse raster maps5. For ion collection, the collection sparse grid is set at a low negative voltage (-80 to -500V), and the thin wire electrode 6 and louver strip set 7 are at -3kV to -3kV in front of the scintillator 8 at positive voltage. Voltage of -4kV. The SE from the louver strip was accelerated to the scintillator with a voltage of +8kV to +12kV relative to the louver strip. Approaching and parallel to the louver strip in the direction of the collection sparse grid, and at a voltage of several hundreds of volts negative relative to the louver strip, the thin wire electrode 6 will likely have moved towards the SE of the collection grid. Push towards the flick...

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Abstract

A versatile high-efficiency charged particle detector is described that measures secondary ions, either secondary electrons from the sample (SE) or secondary electrons (SE3) originating from backscattered electrons, by switching the bias voltage. The basic version and two decomposed versions of the detector structure make it possible to use the following detection combinations: 1. The main version is used to measure secondary ions together, or secondary electrons from the sample, or due to impacts on the back of parts other than the sample Secondary electrons caused by scattered electrons, or secondary electrons from the sample are not measured; 2. Secondary ions are measured or secondary electrons from the sample are measured (SE3 is not measured); 3. Secondary electrons from the sample are measured and / or by Secondary electrons resulting from backscattered electrons colliding with objects other than the sample (ions not measured).

Description

field of invention [0001] The present invention relates to the detection of secondary ions or secondary electrons generated by analytical or surface modification instruments such as scanning electron microscopes (SEM), focused ion beams (FIB), scanning Auger instruments, electron beam writing machines, and the like. In these instruments, surface properties in the form of images are obtained by measuring secondary or reflected particles released or generated by a scanning particle beam. Background technique [0002] Almost all SEMs are measured using ETD (Everhardt Thornley detector, T.E.Everhardt and R.F.M.Thornley, "Wideband detector for microamperelow-energy electron currents" J.Sci.Instr.37, 246-248(1960)) due to the electron beam on the sample The current of secondary electrons (SE) generated by scanning. Correlating the number of secondary electrons accumulated in a particular period of time to the location bombarded by the scanning beam during that period forms a pict...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/244H01J43/22
CPCH01J2237/31749H01J37/244G01N23/2251H01J43/22H01J37/28H01J2237/2448H01J43/24H01J2237/2449
Inventor 阿明·舍恩埃利·切菲兹谢苗·绍夫曼
Owner EL MUL TECH