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Image sensor and manufacturing method thereof

A technology of image sensor and pixel, applied in the field of image sensor

Active Publication Date: 2008-06-25
POWERCHIP SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] Therefore the main purpose of the present invention is to provide an image sensor and its operation method, to solve the problems of the above-mentioned conventional image sensor

Method used

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  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof

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Embodiment Construction

[0048] Please refer to Figure 6 to Figure 7 ,in Image 6 is a schematic cross-sectional view of the image sensor 100 of the present invention, and Figure 7 for Image 6 A top view of a portion of image sensor 100 is shown. The image sensor 100 is a photoconductor-on-active-pixel (POAP) image sensor formed on a semiconductor wafer 102 including a substrate 104 . The image sensor 100 includes a dielectric layer 106 disposed on a substrate 104 and a plurality of pixels 108 defined on the substrate 104, wherein the pixels 108 are arranged in a pixel matrix 110, such as Figure 7 shown. Each pixel 108 includes a pixel circuit 112 and a pixel electrode 114 disposed in the dielectric layer 106, wherein the pixel circuit 112 may include at least one metal-oxide-semiconductor filed effect transistor (MOSFET), and the pixel The electrode 114 includes a metal material, such as titanium nitride (TiN), and is vertically electrically connected to the corresponding pixel circuit 112 v...

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Abstract

The invention discloses an image sensor, which comprises a substrate. A pixel matrix which comprises a plurality of pixels is defined on the substrate, a photoconductive layer and a shielding electrode are arranged on the pixel electrodes of each pixel in sequence, and the shielding electrode is arranged between the pixel electrodes of any two adjacent pixels, and the shielding electrode series presents meshwork and is arranged on the periphery of an individual pixel.

Description

technical field [0001] The invention relates to an image sensor, in particular to an image sensor including a shielding electrode to solve the problem of carrier crosstalk. Background technique [0002] An image sensor such as a complementary metal oxide semiconductor (CMOS) or charge coupled device (CCD) is a silicon semiconductor device designed to capture photons (light) and convert them into electrons . After being converted into electrons, the electrons are transmitted and converted again into a measurable voltage, which turns into digital data. The industry has conducted research on an image sensor based on hydrogenated amorphous silicon (α-Si:H) stacked on CCD or CMOS elements, in pursuit of performance superior to traditional CCD or CMOS image sensors , which is described below. Because of the high light-collecting effective area ratio (fill factor) brought by the stacked structure, the entire pixel area can be used to sense photons, and combined with the characte...

Claims

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Application Information

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IPC IPC(8): H01L27/146H01L21/822
Inventor 三井田高
Owner POWERCHIP SEMICON MFG CORP