Self-aligning metal silicide preparation method

A metal silicide and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor thickness uniformity of metal silicide, achieve good consistency, improve stability, and improve the process window Effect
CN101211781AInactive Publication Date: 2008-07-02SEMICON MFG INT (SHANGHAI) CORP
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2008-07-02
Estimated Expiration
Not applicable · inactive patent

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Abstract

A method for manufacturing a self-aligned metal silicide comprises the steps that: a semiconductor substrate is provided and at least a silicon area is arranged on the surface of the semiconductor substrate; a metal layer is formed on the semiconductor substrate and the first step of annealing process is applied to the semiconductor substrate and the second step of annealing process is applied to the semiconductor substrate; the metal layer is removed by etching. The thickness and resistivity of the metal silicide formed through the method of the invention have better consistence.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a self-aligned metal silicide. Background technique

[0002] Metal silicide is widely used in source-drain contacts and gate contacts to reduce contact resistance due to its low resistivity and good adhesion to other materials. The refractory metal and silicon react together to form a metal silicide, and a low-resistivity metal silicide can be formed through a one-step or multi-step annealing process. With the shrinking of the size of semiconductor devices, the requirements for device performance are getting higher and higher, especially for technology nodes of 90nm and below. In order to obtain lower contact resistance, the industry uses nickel, cobalt and other metals instead of titanium to form low resistivity. metal silicide metal material. Chinese patent application No. 03814954.0 discloses a method for manufacturing nickel me...

Claims

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