A multi-bit programmable non-volatile memory unit, array and the corresponding manufacturing method

Abstract

The invention discloses a multi-bit programmable nonvolatile memory unit, array and the manufacturing method, including a word line, a bit line, a source line and a plurality of memory units which are arranged among the word line, the bit line and the source line; wherein, the grids of the transistors in the memory units are connected with the word line; the drains of the transistors which are arranged in the memory units are connected with the capacitors in series to be connected on the bit line; the sources of the transistors which are arranged in the memory units are connected with the source line; the capacitors are formed sequentially by the connections of metal layers, contact holes, blocking layers and an active area; the capacitors can generate various scheduled resistance values under different scheduled voltages and after different scheduled action times; the various scheduled resistance values are used for the representation of various memory states of the memory units. Theinvention can greatly improve the data storage capacity and the storage stability of a single memory unit of the memory and further reduce the area of the memory, thus the invention is more beneficial to the application of large-scale integrated circuits.

Description

technical field [0001] The invention mainly relates to a semiconductor storage device, in particular to a multi-bit programmable non-volatile memory unit, an array and a manufacturing method thereof. Background technique [0002] With the continuous development of integrated circuit technology, the requirements for the manufacturing technology of integrated circuit chips are getting higher and higher, especially for the manufacturing technology of semiconductor memory devices. Change the existing semiconductor memory manufacturing technology. There are many types of semiconductor memory, among which non-volatile semiconductor memory is widely used. Currently, nonvolatile memories include read-only nonvolatile memories, programmable read-only nonvolatile memories, programmable erasable read-only nonvolatile memories, and the like. [0003] Existing programmable non-volatile memories often use fuse or anti-fuse manufacturing technology, which requires special processes and m...

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Problems solved by technology

[0004] In addition, the existing programmable non-volatile memory cells manufactured based on logic technology need more than two metal oxide semiconductor (MOS, Metal Oxide Semiconductor) transistors Composition, occupying a relatively large area

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