Silicon slice with asymmetry edge contour and manufacturing method thereof

Abstract

The invention relates to a silicon chip with asymmetry edge profile and a manufacturing method. The edge profile of the silicon chip comprises a profile from the upper surface of the silicon chip to the lower surface of the silicon chip via twisting the front end surface of the silicon chip. The front end surface of the silicon chip is a straight line, the transitional edge profile between the upper surface of the silicon chip and the front end surface of the silicon chip is a passage of circular arc EP1, the circular arc EP1 is tangent with the front end surface of the silicon chip and is intersecting with the upper surface of the silicon chip. The transitional edge profile between the lower surface of the silicon chip and the front end surface of the silicon chip are a long sloping sideand a passage of circular arc EP2, the long sloping side and the lower surface of the silicon chip are with alpha angle, the circular arc EP2 is respectively tangent with the long sloping side and the front end surface of the silicon chip. The steps of the manufacturing method of the silicon chip comprise cutting film, chamfering hob and reserving polishing surplus on the upper surface, grinding the upper and lower surface, conducting etching treatment and polishing the upper surface to remove the reserved polishing surplus. After thinning process in the next phase, the edge of the silicon chip does not form an acute angle, the probability of damaging the edge is reduced and the percent of pass of the finished product is increased.

Description

technical field [0001] The invention relates to a silicon chip with an asymmetric edge profile and a manufacturing method thereof, belonging to a semiconductor device manufacturing method using a silicon chip as a substrate in a mass production process. Background technique [0002] Using the traditional substrate silicon wafer manufacturing method, the silicon wafer needs to go through the following steps: slicing, chamfering, grinding, etching, and polishing on one or both sides. The edge profile of the silicon wafer after chamfering has two types: T-type and R-type (such as figure 1 and figure 2 Shown), all belong to the symmetrical profile, that is, the front and back surfaces of the silicon wafer have the same edge profile. In the subsequent wafer processing process, the silicon wafer will be thinned on the back side. figure 1 , figure 2 , image 3 As shown in the figure below the middle arrow, the final thickness t is usually about 100 μm. The edge of the silico...

AI Technical Summary

Problems solved by technology

In the subsequent wafer processing process, the silicon wafer will be thinned on the back side. figure 1 , figure 2 , image 3 As shown in the figure below the middle arrow, the final thickness t is usually about 100 μm. The edge of the silicon wafer manufactured by the traditional chamfering method will present an acute angle (generally between about 5° and 50°) after the back side is thinned, as shown in attached figure 1 , figure 2 As shown in , during the processing of these acute-angled parts, edge damage, gaps or even fragments are prone to occur, which can induce process defects, produce particle pollution, and lead to a decrease in process pass rate

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