Check patentability & draft patents in minutes with Patsnap Eureka AI!

LED device and preparing process thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as short circuits and poor heat conduction effects, and achieve the effects of good heat dissipation paths and good insulation effects.

Inactive Publication Date: 2008-07-23
DELTA ELECTRONICS INC
View PDF0 Cites 27 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the light-emitting diode element 11 is bonded to the carrier substrate 12, the excessively large conductive bump B01 may cause a short circuit between the first reflective electrode E01 and the second reflective electrode E02.
However, if the conductive bump B01 is too small, it will lead to poor heat conduction effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED device and preparing process thereof
  • LED device and preparing process thereof
  • LED device and preparing process thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] The light emitting diode device and its manufacturing method according to preferred embodiments of the present invention will be described below with reference to related drawings.

[0052] Please refer to figure 2 As shown, the method for manufacturing a light emitting diode device according to a preferred embodiment of the present invention includes steps S1 to S10.

[0053] Please also refer to Figure 3A to Figure 3E shown, which is the same as figure 2 Schematic diagram of the step-fit ​​LED device 2 .

[0054] Such as Figure 3AAs shown, step S1 forms a first electrode pair E21 on the surface 211 of the thermally conductive substrate 21 , and the first electrode pair E21 includes an electrode E21a and an electrode E21b. And step S2 forms the second electrode pair E22 on the LED element 22 . In this embodiment, the LED device is a flip-chip LED device, that is, an n-type semiconductor doped layer 222 , a light-emitting layer 223 and a p-type semiconductor do...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a luminescence diode device, which comprises a first electrode pair, a second electrode pair, a first insulating layer, a second insulating layer, a reflective layer, a first insulating body, a second insulating body, a first junction layer and a second junction layer, wherein the first electrode pair is formed on a first surface of a thermal conducting substrate, the second electrode pair is formed on a luminescence diode element and is arranged corresponding to a first electrode pair, the first insulating layer is formed between the first electrode pair, and the second insulating layer is formed between the second electrode pair. The reflective layer is formed on the second insulating layer, the first insulating body is covered on a part of the first electrode pair and a part of the first insulating layer, the second insulating body is arranged corresponding to the first insulating body and is connected with the first insulating body, and the second insulating body is covered on a part of the second electrode pair and a part of the second insulating layer and a part of the reflective layer. The first junction layer is formed on the first electrode pair and the first insulating layer, the second junction layer is formed on the second electrode pair and the reflective layer, and the second junction layer is arranged corresponding to the first junction layer and is electrically connected with the first junction layer.

Description

technical field [0001] The present invention relates to a light emitting device, in particular to a light emitting diode device. Background technique [0002] A light-emitting diode (light-emitting diode, LED) device is a light-emitting element made of semiconductor materials. Since the light-emitting diode device is a cold light emitting device, it has the advantages of low power consumption, long component life, fast response speed, etc., and it is easy to make extremely small or array components due to its small size. Therefore, in recent years, with the continuous advancement of technology , and its application range covers indicator lights of computers or home appliances, backlights of liquid crystal display devices, traffic signs or vehicle lights. [0003] However, since the photoelectric element material used in the light-emitting diode element of the light-emitting diode device is gallium nitride, its photoelectric conversion efficiency cannot be effectively improv...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/00H01L33/62H01L33/64
Inventor 薛清全廖学国陈煌坤
Owner DELTA ELECTRONICS INC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com