A crossed iron electric memory array structure
A ferroelectric storage and array structure technology, applied in information storage, static memory, digital memory information and other directions, can solve the problem of the size and operation speed of the decoder, the inability to effectively optimize the storage array, and increase the circuit complexity and area. and other problems to achieve the effect of shortening the length, simplifying the design, and improving the reading and writing speed.
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[0015] The invention designs a cross-type ferroelectric storage array structure. The cross-type ferroelectric storage array structure takes the cross-type ferroelectric storage unit as a basic component.
[0016] Such as figure 1 In the cross-type ferroelectric memory array structure shown, the dotted circle in the figure represents the cross-type FeRAM memory unit, where ① is Ce1, ② is Ce2, ③ is Ce3 and ④ is Ce4. Each ferroelectric memory cell shares the control line CL with the memory cells in the same row or column in the horizontal and vertical directions, the data signal line BL in the column direction is shared between the memory cells in the same column, and the row line is shared between the memory cells in the same row. For the upward data signal line BL, the data signal line BL is not shared between rows and columns. Specifically, it includes one row control line (CL_R2), one column control line (CL_C2), two row data lines (BL_R2, BL_R3), and two column data lines...
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