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MOS force sensitive sensor

A sensor and MOS transistor technology, applied in the field of MOS force-sensitive sensors, can solve problems such as complex manufacturing process

Inactive Publication Date: 2008-08-13
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Capacitive and resonant pressure sensors have higher sensitivity, but the manufacturing process is more complicated

Method used

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Embodiment Construction

[0011] The present invention includes two kinds of force-sensitive components, MOS transistor and piezoresistor, which are all based on the principle of pressure-sensitive effect of silicon material. When pressure is applied, the channel mobility of the MOS transistor and the resistance value of the resistor change. The change of pressure can be detected by detecting the change of output voltage (or current) of the piezo-sensitive bridge composed of MOS transistor and resistor.

[0012] Figure 1 is a schematic diagram of the structure of the MOS transistor pressure sensor. The sensor is composed of a two-layer structure, the upper part is the structural chip, and the lower part is the sealing cover. There is a square silicon cup in the middle of the structural chip, surrounded by round thickness bulk silicon, and a thin silicon film in the middle. There are two pressure-sensitive MOS transistors M1, M2 and two pressure-sensitive resistors R1, R2 on the silicon cup, which are d...

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Abstract

MOS force sensor belongs to the field of sensor technology, being characterized in: comprising a structural chip and a sealed cover board. A vacuum silicon cup is formed on the structural chip; Silicon sheets with original thickness are around the cup; a silicon film is at the middle of the cup; edge of the silicon film configures stress sensitive integral section; the said section uses the MOS transistor and voltage-sensitive resistance to form differential geminate transistors; when the external force acts on silicon film, the MOS transistor trench moving rate and resistance bar moving rate will be changed by stress; when the structural chip is connected to [the] upper and lower bond of the sealed cover board are connected, voltage difference output by the said difference geminate transistors has linear relation with the stress under the effect of a constant voltage resource. This invention has the advantages of simple technique, stability and great linearity, high sensitivity, low power consumption, adjustable parameter.

Description

technical field [0001] The MOS pressure sensor belongs to the field of MOS device and pressure sensor manufacturing. Background technique [0002] According to the working principle, pressure sensors mainly include capacitive, resonant and piezoresistive. Capacitive and resonant pressure sensors have higher sensitivity, but the manufacturing process is more complicated. Compared with the first two types of devices, the piezoresistive pressure sensor has a simple manufacturing process and high linearity, and is widely used. [0003] Based on the force-sensing effect of MOS transistors, the present invention proposes a new type of MOS force-sensitive sensor. Compared with the most widely used piezoresistive force-sensitive sensor at present, the sensor inherits simple manufacturing process, stability and linearity on the one hand. On the other hand, this new type of MOS force-sensitive sensor has higher sensitivity, lower power consumption and adjustable performance paramete...

Claims

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Application Information

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IPC IPC(8): G01L1/18G01L1/20
Inventor 张兆华张艳红刘理天任天令林惠旺
Owner TSINGHUA UNIV
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