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Photo-etching machine image-forming quality on-site measurement method

A technology of imaging quality and measurement method, applied in the measurement field of lithography machine, can solve the problems of measurement accuracy limitation and inability to meet the accuracy, and achieve the effect of reducing errors and improving test accuracy

Active Publication Date: 2010-09-15
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires a mask mark alignment system such as TIS to complete the test mark imaging position measurement, and the measurement accuracy is limited by the alignment accuracy. With the reduction of the lithographic feature size, it gradually cannot meet the accuracy requirements.

Method used

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  • Photo-etching machine image-forming quality on-site measurement method
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  • Photo-etching machine image-forming quality on-site measurement method

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Embodiment Construction

[0022] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0023] Such as figure 1 As shown, the system used in the present invention includes: a light source 101 for generating a projected light beam; an illumination system 102 for adjusting the light intensity distribution and partial coherence factor of the light beam emitted by the light source; the mask pattern can be imaged and its numerical aperture can be An adjustable imaging optical system 104; a mask stage 108 capable of carrying the mask 103 and precisely positioned; a workpiece stage 106 capable of carrying a silicon wafer 105 and precisely positioned; a laser interferometer 107 capable of precisely positioning the workpiece stage.

[0024] The steps of measuring the image quality parameters of the lithography machine in the present invention are as follows, and the obtained image is as follows: figure 2 as shown ( figure 2 It is a ...

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Abstract

The invention discloses a field measurement method for photo-etching machine imaging quality. Projection objective wave aberration is fitted and calculated using a mathematical model by obtaining imaging device relative deviation, namely, alignment error marked in different illumination setting condition. The mark imaging relative error is obtained independent of the alignment system, so that error induced by the alignment system measurement mark position is reduced and measurement precision is increased.

Description

technical field [0001] The invention relates to a method for measuring a photolithography machine, in particular to an on-site measurement method for the imaging quality of a photolithography machine. Background technique [0002] Lithography machine is one of the key equipment in the production and manufacturing process of integrated circuits. Imaging quality is an important factor affecting the lithography resolution and overlay accuracy of a lithography machine. With the reduction of lithography feature size, the impact of wave aberration of projection objective lens on lithography quality is becoming more and more prominent, and in-situ detection of wave aberration has become an indispensable function in advanced projection lithography machines , the measurement technology of wave aberration has become an important means to ensure the performance of lithography. [0003] People such as Peter Dirksen (Peter Dirksen) proposed a kind of detection technique (prior art 1) o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F1/14G02B27/00G03F1/44
Inventor 李术新王帆
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD