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Electrolytic polishing method and apparatus for semiconductor material

An electrolytic polishing and semiconductor technology, which is applied in the field of electrolytic polishing devices, can solve problems such as difficulty in guaranteeing the effect, poor electrical conductivity, and low current density, and achieve the effects of increased electrical conductivity, accurate control, and increased current density

Inactive Publication Date: 2010-04-07
SHANDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under normal conditions, the conductivity of semiconductor materials is poor. If electrolytic polishing is carried out, the current density is very small, the polishing efficiency is very low, and the effect is difficult to guarantee.

Method used

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  • Electrolytic polishing method and apparatus for semiconductor material
  • Electrolytic polishing method and apparatus for semiconductor material

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Experimental program
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Embodiment Construction

[0012] exist figure 1 In the illustrated embodiment, the anode 6 uses cadmium zinc telluride Cd 0.8 Zn 0.2 Te, by the formula The wavelength of the calculated light source should be less than 787.8nm, and the lamp tube 8 uses a near-infrared lamp of 700nm-780nm as the light source to irradiate the anode 6 .

[0013] A support 9 and a cathode 10 are arranged in an electrolytic cell 12 filled with an electrolyte 13 . The lamp tube 8 is put into the glass tube 11, sealed with a waterproof and corrosion-resistant sealing head 7, and supported and fixed with a bracket 9. The wire 17 in the electrolytic cell 12 is sealed and protected with a glass tube, and is drawn out from the lead hole of the electrolytic cell cover 3 to be connected to the AC power supply 2 externally. The external thread of the threaded sleeve 1 and the threaded hole of the electrolytic cell cover 3 form a bolt and nut pair, the screw rod of the loading block 4 and the internal thread of the threaded sleev...

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PUM

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Abstract

The invention provides method for electrolyticly polishing semi-conductor materials, which takes pre-polished semi-conductor materials as an anode and is caricaturized in that irradiating the anode byusing light with certain wave length during the electrolytic polishing to realize the electrolytic polishing devices adopted by the above method, comprising an electrolysis bath which is full of electrolyte, an electrolysis bath cover, an anode, a cathode, line conductor, alternating current supply and direct current power supply, wherein additively arranging a light irradiating system and a regulating block which is used for controlling the anode to probe electrolyte deepness, wherein the light irradiating system comprises a lamp which is sealed in a glass tube, the line conductor in the electrolyte is protected through the glass tube in sealing and is connected with the alternating current supply by passing through the cover of the electrolysis bath, the glass tube is fixedly supportedinthe electrolysis bath by a supporting stand, the regulating block comprises a threaded sleeve and a loading block, wherein the external screw thread of the threaded sleeve is formed into a bolt screw nut pair with screwed holes of the electrolysis bath cover, the screw bolt of the loading block is formed into a bolt screw nut pair with the female screw of the threaded sleeve, in the anode is glue d by conducting resin on the bottom surface of the loading block, the cathode and the anode are correspondingly connected to those of the direct current power supply.

Description

technical field [0001] The invention relates to an electrolytic polishing device used to realize a semiconductor material electrolytic polishing method, belonging to the field of semiconductor material processing. Background technique [0002] Electrolytic polishing (anodic brightening) technology was invented by the Russian scholar Xu Bintaski as early as 1911. It is a method of using anodic corrosion to make the surface of the sample smooth and bright. When the current density is sufficient, the surface of the sample is selectively dissolved due to electrochemical action, and the tiny protrusions on the surface of the material dissolve into the solution, thus becoming smooth and flat. This method avoids the residual stress and plastic deformation of the surface layer that may be caused by mechanical polishing, so that the real structure of the material can be displayed more accurately. Electrolytic polishing is widely used in the polishing of metallic materials. High-glo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25F3/30
Inventor 刘俊成董抒华崔红卫宋德杰
Owner SHANDONG UNIV OF TECH