Aligning system, mark, method for lithographic device and lithographic device thereof

A technology for alignment marks and alignment systems, applied in microlithography exposure equipment, photolithography exposure devices, optics, etc., to improve energy utilization, reduce alignment position errors, improve alignment signal strength and detect The effect of the dynamic range

Active Publication Date: 2008-08-27
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The object of the present invention is to provide an alignment system, an alignment mark, an alignment method and a lithography device for a lithography device, which can reduce the alignment position error caused by

Method used

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  • Aligning system, mark, method for lithographic device and lithographic device thereof
  • Aligning system, mark, method for lithographic device and lithographic device thereof
  • Aligning system, mark, method for lithographic device and lithographic device thereof

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Embodiment Construction

[0044] The specific embodiments of the present invention will be further described below in conjunction with the accompanying drawings.

[0045] Figure 10 It shows the structure schematic diagram of the alignment mark and reference grating in the prior art. The wedge array or wedge plate group is used to realize the corresponding overlap and coherence of the positive and negative sub-spots of the multi-level diffracted light of the alignment mark, and at the same time, the diffraction at each level The deflection of the light beam through the wedge array or the wedge plate group makes the grating images of the alignment mark X8.0 for x-direction alignment arranged and imaged along the y-direction on the image plane; for y-direction alignment The grating images of all levels of grating Y8.0 are arranged and imaged along the x direction on the image plane, which avoids the situation that the grating images of different periods scan a reference grating at the same time when the ...

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Abstract

The present invention discloses an alignment system, an alignment mark and an alignment method for photoetching devices, as well as a photoetching device. By detecting light intensity changes of +-1 grade diffraction light of a first grating, a second grating and a third grating of the alignment mark on an image plane, wherein the +-1 grade diffraction light is modulated via a reference grating after coherent imaging, the center position of the alignment mark is acquired through the phase information of transmitted light signals, wherein the rough position information of the alignment mark is acquired through the alignment signals of the first grating and the second grating of the alignment mark; the exact position information of the alignment mark is acquired through the alignment signals of the third grating of the alignment mark. The alignment system reduces alignment position error caused by the asymmetrical deformation of the alignment mark, effectively solves the problems of signal crosstalk, improves the energy utilization ratio of a light source, and is beneficial to improve the intensity of alignment signals and the dynamic range of detection.

Description

technical field [0001] The present invention relates to photolithography devices in the field of integrated circuit or other micro-device manufacturing, in particular to an alignment system, alignment marks, an alignment method and a photolithography device. Background technique [0002] The photolithography apparatus in the prior art is mainly used in the manufacture of integrated circuits (ICs) or other micro devices. With a photolithographic apparatus, multilayer masks with different mask patterns are sequentially imaged in precise alignment on a photoresist-coated wafer, such as a semiconductor wafer or an LCD panel. Lithography devices are generally divided into two categories, one is a stepping lithography device, the mask pattern is exposed and imaged on one exposure area of ​​the wafer, and then the wafer moves relative to the mask to move the next exposure area to the mask pattern and under the projection objective, the mask pattern is again exposed on another expo...

Claims

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Application Information

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IPC IPC(8): G03F9/00G03F7/20G02B27/00
Inventor 徐荣伟韦学志杜聚有
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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