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Image sensor and production method thereof

An image sensor and pixel technology, applied in the field of image sensors, can solve problems affecting the accuracy of image sensing, distortion of sensing results, etc., to achieve the effect of improving image sensing effect and sensitivity, and preventing crosstalk problems

Active Publication Date: 2008-09-24
POWERCHIP SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, crosstalk problems occur, which affect the accuracy of image sensing and cause distortion of sensing results

Method used

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  • Image sensor and production method thereof
  • Image sensor and production method thereof
  • Image sensor and production method thereof

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Embodiment Construction

[0035] Please refer to Figure 3 to Figure 9 , Figure 3 to Figure 9 It is a schematic diagram of the structure and process of the image sensor 100 of the present invention. The image sensor 100 of the present invention is a photoconductor covered active pixel image sensor. First, if image 3 As shown, a semiconductor chip 102 is provided, which includes a semiconductor substrate 104, such as a silicon substrate, and a plurality of pixels 108 are defined on the surface of the semiconductor substrate 104 to form a pixel matrix. Next, a plurality of electronic components are provided on the semiconductor substrate 104 to form the pixel circuit 110 disposed in the dielectric layer 106 . Next, a first conductive layer 112 is formed on the dielectric layer 106 and located on the pixel circuit 110 , wherein the first conductive layer 112 may include a metal material, preferably titanium nitride (TiN). Then as Figure 4 As shown, the first photolithography process is carried out...

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Abstract

The invention provides an image sensor, which comprises a plurality of pixels defined on a semiconductor base, a photoconductive layer and a transparent conducting layer which are arranged on a pixel electrode in sequence, and a masking element arranged between any two adjacent pixel electrodes. The masking element comprises a masking electrode and an insulation structure and covers the masking electrode, thus causing the masking electrode to be isolated from the pixel electrode and the photoconductive layer.

Description

technical field [0001] The invention provides an image sensor, especially an image sensor including a shielding element, so as to solve the problem of carrier crosstalk. Background technique [0002] Image sensors such as complementary metal oxide semiconductors (CMOS) or charge coupled devices (CCDs) are silicon semiconductor devices designed to capture photons and convert them into electrons, which are transported After that, it is converted into a measurable voltage again to obtain digital data. At present, the industry has conducted research on a photoconductor-on-active-pixel (POAP) image sensor, whose structure is based on hydrogenated amorphous silicon (α-Si:H) as the photosensitive element and Stacked on CCD or CMOS elements, an image sensor with better performance than conventional CCD or CMOS image sensors can be obtained. Since the photoconductor-covered active pixel image sensor has a special stack structure, it has the advantage of high light-collecting effect...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L21/82
Inventor 汪信亨黄丘宗林世翔
Owner POWERCHIP SEMICON MFG CORP