Semiconductor device and fabrication method thereof
A semiconductor and substrate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, radiation control devices, etc., can solve problems such as increasing S/N ratio and increasing RF signal noise
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0042] A first example of an embodiment of a semiconductor device according to the present invention is described with reference to a cross-sectional view of a schematic structure shown in FIG. 1 . FIG. 1 illustrates an example of a semiconductor device including a plurality of photodiodes electrically isolated from a semiconductor substrate employing an SOI (Silicon On Insulator) substrate.
[0043] As shown in FIG. 1 , an SOI (Silicon On Insulator) substrate is used in which an insulating layer 12 is formed on a semiconductor substrate 11 and a silicon layer is formed on the insulating layer 12 . The insulating layer 12 is formed of a silicon oxide film. P + Type impurities are introduced into the silicon layer. The silicon layer serves as the P + Type buried layer 13. For example, the impurity concentration of the buried layer 13 is set to be higher than or equal to 1×10 16 / cm 3 and less than or equal to 1×10 22 / cm 3 value. P - Type low concentration layer 14 is...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com