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Method and its system for controlling photolithography exposure dosage

A technology of exposure dose and lithography, which is applied in the field of lithography machines, can solve the problems of multiple equipment and complex structure, and achieve the effect of simple system structure, simple algorithm, and improved precision

Active Publication Date: 2008-11-19
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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AI Technical Summary

Problems solved by technology

This method is to add functional links in the optical path, and adjust through hardware and optical equipment, and the adjustment time is required to be completed within two pulse intervals, so there are many devices in the optical path of the entire system, and the structure is complex

Method used

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  • Method and its system for controlling photolithography exposure dosage
  • Method and its system for controlling photolithography exposure dosage
  • Method and its system for controlling photolithography exposure dosage

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0036] figure 1 Shown is a flow chart of an embodiment of a method for controlling exposure dose of lithography provided by the present invention. Such as figure 1 As shown, the process steps include:

[0037] Step 10: Experimentally generate a pulse precision coefficient and pulse number relationship comparison table;

[0038] Further, perform step 20: according to the coefficient ζ required by the exposure accuracy, look up the number of pulses N from the relationship comparison table in step 10 D ;

[0039] Further, perform step 30: calculate the actual required number of pulses Np,min according to the unattenuated single pulse dose and the ideal required exposure dose;

[0040] Further, perform step 40: for the number of pulses N D Compare with Np and mi...

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Abstract

The invention provides a method for controlling the lithography exposure dose and a system. The method for controlling the lithography exposure dose is to make use of the characteristic that the average volatility of multiple pulses is lower than the requirement of exposure precision, to control the lithography exposure dose precision by selecting the number of the exposed laser pulses so as to further decide the decay rate for final exposure. The system using the method of controlling the lithography exposure dose mainly comprises a laser, an attenuator, a controller and an energy sensor; the system has relatively simple structure and can greatly improve the lithography exposure dose accuracy through the combination with the method for controlling the lithography exposure dose.

Description

technical field [0001] The invention relates to the technical field of photolithography machines, in particular to a method and system for controlling photolithography exposure dose. Background technique [0002] In the manufacture of integrated circuit chips, lithography technology is a key technology, and the continuous reduction of chip feature size is accompanied by the continuous progress of lithography technology. The development of photolithography technology has made the feature size CD (Critical Dimension) reach 100nm or even below 100nm. As lithography resolution increases, so does the requirement for CD uniformity. There are many factors that affect CD uniformity, for example, a series of photolithography processes such as glue coating, exposure, development, and etching will affect CD uniformity. Wherein, the exposure step is completed by a photolithography machine. The exposure dose is an important parameter set by the lithography machine during the exposure ...

Claims

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Application Information

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IPC IPC(8): G03F7/20
Inventor 江潮罗闻徐文
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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